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Mustafa Alevli
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Structural properties of AlN films deposited by plasma‐enhanced atomic layer deposition at different growth temperatures
M Alevli, C Ozgit, I Donmez, N Biyikli
physica status solidi (a) 209 (2), 266-271, 2012
1422012
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
C Ozgit, I Donmez, M Alevli, N Biyikli
Thin Solid Films 520 (7), 2750-2755, 2012
1222012
Atomic layer deposition of GaN at low temperatures
C Ozgit, I Donmez, M Alevli, N Biyikli
Journal of Vacuum Science & Technology A 30 (1), 2012
972012
GaN∕ AlGaN ultraviolet/infrared dual-band detector
G Ariyawansa, MBM Rinzan, M Alevli, M Strassburg, N Dietz, AGU Perera, ...
Applied physics letters 89 (9), 2006
912006
The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
M Alevli, C Ozgit, I Donmez, N Biyikli
Journal of Crystal Growth 335 (1), 51-57, 2011
672011
Characterization of InN layers grown by high-pressure chemical vapor deposition
M Alevli, G Durkaya, A Weerasekara, AGU Perera, N Dietz, W Fenwick, ...
Applied physics letters 89 (11), 2006
592006
Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
M Alevli, C Ozgit, I Donmez, N Biyikli
Journal of Vacuum Science & Technology A 30 (2), 2012
472012
A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation
B Tekcan, S Alkis, M Alevli, N Dietz, B Ortaç, N Biyikli, AK Okyay
IEEE Electron Device Letters 35 (9), 936-938, 2014
392014
The characterization of InN growth under high‐pressure CVD conditions
N Dietz, M Alevli, V Woods, M Strassburg, H Kang, IT Ferguson
physica status solidi (b) 242 (15), 2985-2994, 2005
392005
Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted …
M Alevli, A Haider, S Kizir, SA Leghari, N Biyikli
Journal of Vacuum Science & Technology A 34 (1), 2016
372016
Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer
N El-Atab, F Cimen, S Alkis, B Ortac, M Alevli, N Dietz, AK Okyay, ...
Applied Physics Letters 104 (25), 2014
312014
The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition
N Dietz, M Alevli, R Atalay, G Durkaya, R Collazo, J Tweedie, S Mita, ...
Applied Physics Letters 92 (4), 2008
262008
Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition
RP Bhatta, BD Thoms, A Weerasekera, AGU Perera, M Alevli, N Dietz
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 25 (4 …, 2007
242007
Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
M Alevli, N Gungor, A Haider, S Kizir, SA Leghari, N Biyikli
Journal of Vacuum Science & Technology A 34 (1), 2016
232016
Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition
RP Bhatta, BD Thoms, M Alevli, N Dietz
Surface science 601 (19), L120-L123, 2007
222007
The Fermi level dependence of the optical and magnetic properties of Ga1− xMnxN grown by metal–organic chemical vapour deposition
M Strassburg, MH Kane, A Asghar, Q Song, ZJ Zhang, J Senawiratne, ...
Journal of Physics: Condensed Matter 18 (9), 2615, 2006
212006
Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition
RP Bhatta, BD Thoms, M Alevli, V Woods, N Dietz
Applied physics letters 88 (12), 2006
202006
Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film
S Alkis, M Alevli, S Burzhuev, HA Vural, AK Okyay, B Ortaç
Journal of Nanoparticle Research 14, 1-6, 2012
192012
Role of film thickness on the structural and optical properties of GaN on Si (100) grown by hollow-cathode plasma-assisted atomic layer deposition
N Gungor, M Alevli
Journal of Vacuum Science & Technology A 36 (2), 2018
182018
Optical characterization of InN layers grown by high-pressure chemical vapor deposition
M Alevli, R Atalay, G Durkaya, A Weesekara, AGU Perera, N Dietz, ...
Journal of Vacuum Science & Technology A 26 (4), 1023-1026, 2008
182008
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