Mihee Ji
Mihee Ji
U.S. Army Research Laboratory
Verified email at
Cited by
Cited by
Rethinking phonons: The issue of disorder
HR Seyf, L Yates, TL Bougher, S Graham, BA Cola, T Detchprohm, MH Ji, ...
npj Computational Materials 3 (1), 49, 2017
Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers
S Choi, MH Ji, J Kim, H Jin Kim, MM Satter, PD Yoder, JH Ryou, ...
Applied Physics Letters 101 (16), 2012
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ...
Journal of Crystal Growth 388, 143-149, 2014
Demonstration of Large-Size Vertical Ga2O3 Schottky Barrier Diodes
M Ji, NR Taylor, I Kravchenko, P Joshi, T Aytug, LR Cao, ...
IEEE Transactions on Power Electronics 36 (1), 41-44, 2020
Thermal characterization of gallium nitride pin diodes
J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ...
Applied Physics Letters 112 (7), 2018
AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than
J Kim, MH Ji, T Detchprohm, JH Ryou, RD Dupuis, AK Sood, NK Dhar
IEEE Photonics Technology Letters 27 (6), 642-645, 2015
Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays
MH Ji, J Kim, T Detchprohm, RD Dupuis, AK Sood, NK Dhar, J Lewis
IEEE Photonics Technology Letters 28 (19), 2015-2018, 2016
Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates
J Kim, MH Ji, T Detchprohm, RD Dupuis, JH Ryou, AK Sood, ND Dhar, ...
Applied Physics Express 8 (12), 122202, 2015
GaN/InGaN avalanche phototransistors
SC Shen, TT Kao, HJ Kim, YC Lee, J Kim, MH Ji, JH Ryou, T Detchprohm, ...
Applied Physics Express 8 (3), 032101, 2015
Temperature-dependent characteristics of GaN homojunction rectifiers
TT Kao, J Kim, YC Lee, AFMS Haq, MH Ji, T Detchprohm, RD Dupuis, ...
IEEE Transactions on Electron Devices 62 (8), 2679-2683, 2015
Temperature-dependent leakage current characteristics of homojunction GaN pin rectifiers using ion-implantation isolation
CW Tsou, MH Ji, M Bakhtiary-Noodeh, T Detchprohm, RD Dupuis, ...
IEEE Transactions on Electron Devices 66 (10), 4273-4278, 2019
Pipin separate absorption and multiplication ultraviolet avalanche photodiodes
MH Ji, J Kim, T Detchprohm, Y Zhu, SC Shen, RD Dupuis
IEEE Photonics Technology Letters 30 (2), 181-184, 2017
Development of high gain GaN/AlGaN avalanche photodiode arrays for UV detection and imaging applications
AK Sood, JW Zeller, YR Puri, RD Dupuis, T Detchprohm, MH Ji, SC Shen, ...
Int. J. Engr. Res. Tech 10 (2), 129-150, 2017
Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production
D Key, E Letts, CW Tsou, MH Ji, M Bakhtiary-Noodeh, T Detchprohm, ...
Materials 12 (12), 1925, 2019
III-N high-power bipolar transistors
RD Dupuis, J Kim, YC Lee, Z Lochner, MH Ji, TT Kao, JH Ryou, ...
ECS Transactions 58 (4), 261, 2013
Homojunction GaN pin rectifiers with ultra-low on-state resistance
TT Kao, J Kim, YC Lee, MH Ji, T Detchprohm, RD Dupuis, SC Shen
Proc. CS MANTECH Int. Conf. Compound Semicond. Manuf. Technol, 157-160, 2014
Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation
J Kim, MH Ji, D Yuan, R Guo, J Liu, M Asadirad, T Detchprohm, MK Kwon, ...
Applied Physics Letters 104 (14), 2014
Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts
NR Taylor, Y Yu, M Ji, T Aytug, S Mahurin, R Mayes, S Cetiner, ...
Applied Physics Letters 116 (25), 2020
Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition
J Kim, MH Ji, T Detchprohm, RD Dupuis, AM Fischer, FA Ponce, JH Ryou
Journal of Applied Physics 118 (12), 2015
Demonstration of uniform and reliable GaN pipin separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area
MH Ji, H Jeong, M Bakhtiary-Noodeh, SC Shen, T Detchprohm, AK Sood, ...
Gallium Nitride Materials and Devices XIV 10918, 51-56, 2019
The system can't perform the operation now. Try again later.
Articles 1–20