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| FinFET device junction formation challenges D Pham, L Larson, JW Yang 2006 International Workshop on Junction Technology, 73-77, 2006 | 177 | 2006 |
| Suppression of corner effects in triple-gate MOSFETs JG Fossum, JW Yang, VP Trivedi IEEE Electron Device Letters 24 (12), 745-747, 2003 | 171 | 2003 |
| On the feasibility of nanoscale triple-gate CMOS transistors JW Yang, JG Fossum IEEE Transactions on Electron Devices 52 (6), 1159-1164, 2005 | 143 | 2005 |
| Semiconductor memory device having different substrate thickness between memory cell area and peripheral area and manufacturing method thereof JW Yang US Patent 5,930,648, 1999 | 140 | 1999 |
| Modeling and significance of fringe capacitance in nonclassical CMOS devices with gate–source/drain underlap SH Kim, JG Fossum, JW Yang IEEE transactions on electron devices 53 (9), 2143-2150, 2006 | 96 | 2006 |
| Improved electrical characteristics of Ge-on-Si field-effect transistors with controlled Ge epitaxial layer thickness on Si substrates J Oh, P Majhi, H Lee, O Yoo, S Banerjee, CY Kang, JW Yang, R Harris, ... IEEE electron device letters 28 (11), 1044-1046, 2007 | 76 | 2007 |
| A review of recent progress in lens-free imaging and sensing M Roy, D Seo, S Oh, JW Yang, S Seo Biosensors and Bioelectronics 88, 130-143, 2017 | 73 | 2017 |
| Highly manufacturable double-gate FinFET with gate-source/drain underlap JW Yang, PM Zeitzoff, HH Tseng IEEE Transactions on Electron Devices 54 (6), 1464-1470, 2007 | 70 | 2007 |
| Body-contacted SOI MOSFET structure with fully bulk CMOS compatible layout and process YH Koh, JH Choi, MH Nam, JW Yang IEEE Electron Device Letters 18 (3), 102-104, 1997 | 63 | 1997 |
| Pragmatic design of nanoscale multi-gate CMOS JG Fossum, LQ Wang, JW Yang, SH Kim, VP Trivedi IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 60 | 2004 |
| Lens-free shadow image based high-throughput continuous cell monitoring technique G Jin, IH Yoo, SP Pack, JW Yang, UH Ha, SH Paek, S Seo Biosensors and Bioelectronics 38 (1), 126-131, 2012 | 59 | 2012 |
| A novel electrode-induced strain engineering for high performance SOI FinFET utilizing Si (1hannel for Both N and PMOSFETs CY Kang, R Choi, SC Song, K Choi, BS Ju, MM Hussain, BH Lee, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 51 | 2006 |
| LED and CMOS image sensor based hemoglobin concentration measurement technique DS Kim, JH Choi, MH Nam, JW Yang, JJ Pak, S Seo Sensors and Actuators B: Chemical 157 (1), 103-109, 2011 | 40 | 2011 |
| 1 Giga bit SOI DRAM with fully bulk compatible process and body-contacted SOI MOSFET structure YH Koh, MR Oh, JW Lee, JW Yang, WC Lee, CK Park, JB Park, YC Heo, ... International Electron Devices Meeting. IEDM Technical Digest, 579-582, 1997 | 35 | 1997 |
| 氨氧化细菌的分子生态学研究进展 董莲华， 杨金水， 袁红莉 应用生态学报 19 (6), 1381-1388, 2008 | 34 | 2008 |
| Explicit analytical current-voltage model for double-gate junctionless transistors BW Hwang, JW Yang, SH Lee IEEE Transactions on Electron Devices 62 (1), 171-177, 2014 | 32 | 2014 |
| Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate BH Lee, CY Kang, P Kirsch, D Heh, CD Young, H Park, J Yang, ... Applied Physics Letters 91 (24), 2007 | 32 | 2007 |
| A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits JW Yang, JG Fossum, GO Workman, CL Huang Solid-State Electronics 48 (2), 259-270, 2004 | 27 | 2004 |
| Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers J Oh, P Majhi, CY Kang, JW Yang, HH Tseng, R Jammy Applied physics letters 90 (20), 2007 | 25 | 2007 |
