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Venkateswarlu Gaddam, Ph.D
Venkateswarlu Gaddam, Ph.D
Postdoctoral Research Associate @ UTD
Verifisert e-postadresse på utdallas.edu - Startside
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Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
V Gaddam, D Das, S Jeon
IEEE Transactions on Electron Devices 67 (2), 745-750, 2020
742020
Scalable fabrication of highly sensitive flexible temperature sensors based on silver nanoparticles coated reduced graphene oxide nanocomposite thin films
N Neella, V Gaddam, MM Nayak, NS Dinesh, K Rajanna
Sensors and Actuators A: Physical 268, 173-182, 2017
562017
Morphology controlled synthesis of Al doped ZnO nanosheets on Al alloy substrate by low-temperature solution growth method
V Gaddam, RR Kumar, M Parmar, GRK Yaddanapudi, MM Nayak, ...
RSC Advances 5 (18), 13519-13524, 2015
542015
Demonstration of High Ferroelectricity (P ~ 29 C/cm2) in Zr Rich HfxZr1–xO2 Films
D Das, V Gaddam, S Jeon
IEEE Electron Device Letters 41 (1), 34-37, 2019
432019
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process
V Gaddam, D Das, T Jung, S Jeon
IEEE Electron Device Letters 42 (6), 812-815, 2021
372021
Synthesis of ZnO nanorods on a flexible Phynox alloy substrate: influence of growth temperature on their properties
V Gaddam, RR Kumar, M Parmar, MM Nayak, K Rajanna
RSC advances 5 (109), 89985-89992, 2015
352015
Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors
D Das, V Gaddam, S Jeon
IEEE Electron Device Letters 42 (3), 331-334, 2021
312021
Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfZr₁₋O₂Capacitors
D Das, B Buyantogtokh, V Gaddam, S Jeon
IEEE Transactions on Electron Devices 68 (4), 1996-2002, 2021
282021
Low temperature VLS growth of ITO nanowires by electron beam evaporation method
RR Kumar, V Gaddam, KN Rao, K Rajanna
Materials research express 1 (3), 035008, 2014
222014
A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
M Jung, V Gaddam, S Jeon
Nano Convergence 9 (1), 44, 2022
202022
Sub 5 Å-EOT HfZr1–xO₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid …
D Das, B Buyantogtokh, V Gaddam, S Jeon
IEEE Transactions on Electron Devices 69 (1), 103-108, 2021
172021
Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors
B Buyantogtokh, V Gaddam, S Jeon
Journal of Applied Physics 129 (24), 2021
172021
Development of a novel acoustic sensor using sputtered ZnO thin film
MN Suma, MVN Prasad, V Gaddam, K Rajanna, M Nayak
J. Pure Appl. Ind. Phys 9 (1), 1-7, 2019
162019
Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0. 5Zr0. 5O2 bilayer system
D Das, T Kim, V Gaddam, C Shin, S Jeon
Solid-State Electronics 174, 107914, 2020
152020
Highly flexible and sensitive graphene-silver nanocomposite strain sensor
N Neella, V Gaddam, K Rajanna, MM Nayak, T Srinivas
2015 IEEE SENSORS, 1-4, 2015
152015
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High …
V Gaddam, G Kim, T Kim, M Jung, C Kim, S Jeon
ACS Applied Materials & Interfaces 14 (38), 43463-43473, 2022
142022
Negative temperature coefficient behavior of graphene-silver nanocomposite films for temperature sensor applications
N Neella, V Gaddam, K Rajanna, MM Nayak
2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and …, 2016
132016
Low cost, disposable and wearable body warmer using RGO sheets coated on cloth substrate as heating element
N Neella, V Gaddam, K Rajanna, MM Nayak
2017 IEEE 12th International Conference on Nano/Micro Engineered and …, 2017
122017
Screen printed rGO-pd nana-composite films on a flexible substrate as temperature sensor
S Nuthalapati, V Kedambaimoole, V Shirhatti, N Neella, V Gaddam, ...
2018 3rd International Conference for Convergence in Technology (I2CT), 1-4, 2018
112018
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Capacitors by Incorporating Ta2O5 Dielectric Seed Layers
V Gaddam, D Das, S Jeon
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2020
102020
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Artikler 1–20