Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, ... Applied Physics Letters 72 (6), 692-694, 1998 | 602 | 1998 |
Enhanced light extraction in LEDs through the use of internal and external optical elements B Thibeault, M Mack, S DenBaars US Patent 6,657,236, 2003 | 521 | 2003 |
A single-chip dual-band tri-mode CMOS transceiver for IEEE 802.11 a/b/g wireless LAN M Zargari, M Terrovitis, SHM Jen, BJ Kaczynski, ML Lee, MP Mack, ... IEEE Journal of Solid-State Circuits 39 (12), 2239-2249, 2004 | 250 | 2004 |
Enhanced light extraction in LEDs through the use of internal and external optical elements B Thibeault, M Mack, S DenBaars US Patent 6,821,804, 2004 | 246 | 2004 |
Enhanced light extraction in leds through the use of internal and external optical elements B Thibeault, M Mack, S DenBaars US Patent App. 10/665,595, 2004 | 246 | 2004 |
Optical properties of InGaN quantum wells SF Chichibu, AC Abare, MP Mack, MS Minsky, T Deguchi, D Cohen, ... Materials Science and Engineering: B 59 (1-3), 298-306, 1999 | 228 | 1999 |
Scalable led with improved current spreading structures EJ Tarsa, B Thibeault, J Ibbetson, M Mack US Patent 6,614,056, 2003 | 174 | 2003 |
Widely tunable electroabsorption-modulated sampled-grating DBR laser transmitter YA Akulova, GA Fish, PC Koh, CL Schow, P Kozodoy, AP Dahl, ... IEEE Journal of Selected Topics in Quantum Electronics 8 (6), 1349-1357, 2002 | 164 | 2002 |
Method and system for a light source assembly supporting direct coupling to an integrated circuit M Mack, M Peterson, S Gloeckner, A Narasimha, R Koumans, ... US Patent App. 12/500,465, 2010 | 158 | 2010 |
Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD MP Mack, A Abare, M Aizcorbe, P Kozodoy, S Keller, UK Mishra, ... Materials Research Society Internet Journal of Nitride Semiconductor Research 2, 1997 | 153 | 1997 |
Electron-irradiation-induced deep level in -type GaN ZQ Fang, JW Hemsky, DC Look, MP Mack Applied physics letters 72 (4), 448-449, 1998 | 151 | 1998 |
Two-photon absorption study of GaN CK Sun, JC Liang, JC Wang, FJ Kao, S Keller, MP Mack, U Mishra, ... Applied Physics Letters 76 (4), 439-441, 2000 | 131 | 2000 |
A single-chip CMOS direct-conversion transceiver for 900 MHz spread-spectrum digital cordless phones T Cho, E Dukatz, M Mack, D Macnally, M Marringa, S Mehta, C Nilson, ... Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC …, 1999 | 101 | 1999 |
An 802.11 g WLAN SoC SS Mehta, D Weber, M Terrovitis, K Onodera, MP Mack, BJ Kaczynski, ... IEEE Journal of Solid-State Circuits 40 (12), 2483-2491, 2005 | 98 | 2005 |
An ultra low power CMOS photonics technology platform for H/S optoelectronic transceivers at less than $1 per Gbps A Narasimha, S Abdalla, C Bradbury, A Clark, J Clymore, J Coyne, A Dahl, ... Optical Fiber Communication Conference, OMV4, 2010 | 88 | 2010 |
Scalable LED with improved current spreading structures E Tarsa, B Thibeault, J Ibbetson, M Mack US Patent App. 10/606,431, 2004 | 88 | 2004 |
Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes S Chichibu, DA Cohen, MP Mack, AC Abare, P Kozodoy, M Minsky, ... Applied physics letters 73 (4), 496-498, 1998 | 88 | 1998 |
A dual-band CMOS MIMO radio SoC for IEEE 802.11 n wireless LAN M Zargari, LY Nathawad, H Samavati, SS Mehta, A Kheirkhahi, P Chen, ... IEEE Journal of Solid-State Circuits 43 (12), 2882-2895, 2008 | 70 | 2008 |
Femtosecond Z-scan measurement of GaN YL Huang, CK Sun, JC Liang, S Keller, MP Mack, UK Mishra, ... Applied physics letters 75 (22), 3524-3526, 1999 | 67 | 1999 |
A 3.2 to 4 GHz, 0.25/spl mu/m CMOS frequency synthesizer for IEEE 802.11 a/b/g WLAN M Terrovitis, M Mack, K Singh, M Zargari Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC …, 2004 | 51 | 2004 |