Jae-Hyun Ryou
Jae-Hyun Ryou
Associate Professor, Mechanical Engineeering, University of Houston
Verified email at - Homepage
Cited by
Cited by
Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates
Wang, Song, P Li, JH Ryou, RD Dupuis, CJ Summers, ZL Wang
Journal of the American Chemical Society 127 (21), 7920-7923, 2005
Control of quantum-confined stark effect in InGaN-based quantum wells
JH Ryou, PD Yoder, J Liu, Z Lochner, H Kim, S Choi, HJ Kim, RD Dupuis
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1080-1091, 2009
Ordered nanowire array blue/near‐UV light emitting diodes
S Xu, C Xu, Y Liu, Y Hu, R Yang, Q Yang, JH Ryou, HJ Kim, Z Lochner, ...
Advanced materials 22 (42), 4749-4753, 2010
New insight into Ni‐rich layered structure for next‐generation Li rechargeable batteries
W Lee, S Muhammad, T Kim, H Kim, E Lee, M Jeong, S Son, JH Ryou, ...
Advanced Energy Materials 8 (4), 1701788, 2018
Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
S Choi, HJ Kim, SS Kim, J Liu, J Kim, JH Ryou, RD Dupuis, AM Fischer, ...
Applied Physics Letters 96 (22), 2010
Barrier effect on hole transport and carrier distribution in InGaN∕ GaN multiple quantum well visible light-emitting diodes
JP Liu, JH Ryou, RD Dupuis, J Han, GD Shen, HB Wang
Applied Physics Letters 93 (2), 2008
Photonic crystal nanobeam lasers
Y Zhang, M Khan, Y Huang, J Ryou, P Deotare, R Dupuis, M Lončar
Applied physics letters 97 (5), 2010
Density-controlled growth of aligned ZnO nanowires sharing a common contact: a simple, low-cost, and mask-free technique for large-scale applications
Wang, J Song, CJ Summers, JH Ryou, P Li, RD Dupuis, ZL Wang
The Journal of Physical Chemistry B 110 (15), 7720-7724, 2006
GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition
JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ...
Applied physics letters 89 (1), 2006
Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes
HJ Kim, S Choi, SS Kim, JH Ryou, PD Yoder, RD Dupuis, AM Fischer, ...
Applied Physics Letters 96 (10), 2010
Performance of deep ultraviolet GaN avalanche photodiodes grown by MOCVD
SC Shen, Y Zhang, D Yoo, JB Limb, JH Ryou, PD Yoder, RD Dupuis
IEEE Photonics Technology Letters 19 (21), 1744-1746, 2007
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate
Z Lochner, TT Kao, YS Liu, XH Li, M Satter, SC Shen, P Douglas Yoder, ...
Applied Physics Letters 102 (10), 2013
Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers
S Choi, MH Ji, J Kim, H Jin Kim, MM Satter, PD Yoder, JH Ryou, ...
Applied Physics Letters 101 (16), 2012
Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator
J Chen, SK Oh, N Nabulsi, H Johnson, W Wang, JH Ryou
Nano Energy 57, 670-679, 2019
Low-noise GaN ultraviolet pin photodiodes on GaN substrates
Y Zhang, SC Shen, HJ Kim, S Choi, JH Ryou, RD Dupuis, B Narayan
Applied Physics Letters 94 (22), 2009
Electrical characteristics of contacts to thin film N-polar n-type GaN
H Kim, JH Ryou, RD Dupuis, SN Lee, Y Park, JW Jeon, TY Seong
Applied Physics Letters 93 (19), 2008
Control of quantum-confined Stark effect in InGaN∕ GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes
JH Ryou, W Lee, J Limb, D Yoo, JP Liu, RD Dupuis, ZH Wu, AM Fischer, ...
Applied Physics Letters 92 (10), 2008
High durable, biocompatible, and flexible piezoelectric pulse sensor using single‐crystalline III‐N thin film
J Chen, H Liu, W Wang, N Nabulsi, W Zhao, JY Kim, MK Kwon, JH Ryou
Advanced Functional Materials 29 (37), 1903162, 2019
Nanostructured-NiO/Si heterojunction photodetector
B Parida, S Kim, M Oh, S Jung, M Baek, JH Ryou, H Kim
Materials science in Semiconductor Processing 71, 29-34, 2017
Bandgap bowing in BGaN thin films
A Ougazzaden, S Gautier, T Moudakir, Z Djebbour, Z Lochner, S Choi, ...
Applied Physics Letters 93 (8), 2008
The system can't perform the operation now. Try again later.
Articles 1–20