Følg
Yoann Tomczak
Yoann Tomczak
Ukjent tilknytning
Verifisert e-postadresse på asm.com
Tittel
Sitert av
Sitert av
År
Structure including a photoresist underlayer and method of forming same
Y Sun, D De Roest, D Piumi, IJ Raaijmakers, BH Kim, T Blanquart, ...
US Patent App. 16/922,520, 2021
2112021
Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Silicon Nitride with inhibition on Amorphous Carbon
E Stevens, Y Tomczak, BT Chan, E Altamirano Sanchez, GN Parsons, ...
Chemistry of Materials 30 (10), 3223-3232, 2018
792018
Diffusion‐Mediated Growth and Size‐Dependent Nanoparticle Reactivity during Ruthenium Atomic Layer Deposition on Dielectric Substrates
J Soethoudt, F Grillo, EA Marques, JR van Ommen, Y Tomczak, L Nyns, ...
Advanced Materials Interfaces 5 (24), 1800870, 2018
582018
BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
J Swerts, S Mertens, T Lin, S Couet, Y Tomczak, K Sankaran, G Pourtois, ...
Applied Physics Letters 106 (26), 2015
572015
Insight into selective surface reactions of dimethylamino-trimethylsilane for area-selective deposition of metal, nitride, and oxide
J Soethoudt, Y Tomczak, B Meynaerts, BT Chan, A Delabie
The Journal of Physical Chemistry C 124 (13), 7163-7173, 2020
432020
[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications
E Liu, J Swerts, S Couet, S Mertens, Y Tomczak, T Lin, V Spampinato, ...
Applied Physics Letters 108 (13), 2016
312016
[Zr(NEtMe)2(guan-NEtMe)2] as a Novel Atomic Layer Deposition Precursor: ZrO2 Film Growth and Mechanistic Studies
T Blanquart, J Niinisto, N Aslam, M Banerjee, Y Tomczak, M Gavagnin, ...
Chemistry of Materials 25 (15), 3088-3095, 2013
312013
In situ reaction mechanism studies on lithium hexadimethyldisilazide and ozone atomic layer deposition process for lithium silicate
Y Tomczak, K Knapas, M Sundberg, M Leskela, M Ritala
The Journal of Physical Chemistry C 117 (27), 14241-14246, 2013
302013
Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance
Y Tomczak, J Swerts, S Mertens, T Lin, S Couet, E Liu, K Sankaran, ...
Applied Physics Letters 108 (4), 2016
212016
Atomic Layer Deposition, Characterization, and Growth Mechanistic Studies of TiO2 Thin Films
M Kaipio, T Blanquart, Y Tomczak, J Niinisto, M Gavagnin, V Longo, ...
Langmuir 30 (25), 7395-7404, 2014
212014
Experimental observation of back-hopping with reference layer flipping by high-voltage pulse in perpendicular magnetic tunnel junctions
W Kim, S Couet, J Swerts, T Lin, Y Tomczak, L Souriau, D Tsvetanova, ...
IEEE Transactions on Magnetics 52 (7), 1-4, 2016
202016
In Situ Reaction Mechanism Studies on Atomic Layer Deposition of AlxSiyOz from Trimethylaluminium, Hexakis(ethylamino)disilane, and Water
Y Tomczak, K Knapas, S Haukka, M Kemell, M Heikkila, M Ceccato, ...
Chemistry of Materials 24 (20), 3859-3867, 2012
202012
In Situ Reaction Mechanism Studies on the New tBuN=M(NEt2)3 -Water and tBuN=M(NEt2)3 - Ozone (M = Nb,Ta) Atomic Layer Deposition Processes
Y Tomczak, K Knapas, M Sundberg, M Leskela, M Ritala
Chemistry of Materials 24 (9), 1555-1561, 2012
172012
Oxygen scavenging by Ta spacers in double-MgO free layers for perpendicular spin-transfer torque magnetic random-access memory
S Couet, J Swerts, S Mertens, T Lin, Y Tomczak, E Liu, B Douhard, ...
IEEE Magnetics Letters 7, 1-4, 2016
162016
Influence of the reference layer composition on the back-end-of-line compatibility of Co/Ni-based perpendicular magnetic tunnel junction stacks
Y Tomczak, T Lin, J Swerts, S Couet, S Mertens, E Liu, W Kim, ...
IEEE Transactions on Magnetics 52 (7), 1-4, 2016
102016
Two-dimensional WS2 crystals at predetermined locations by anisotropic growth during atomic layer deposition
B Groven, Y Tomczak, M Heyns, I Radu, A Delabie
Journal of Applied Physics 128 (17), 2020
52020
Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning
P Vanelderen, V Blanco, M Mao, Y Tomczak, D De Roest, N Kissoon, ...
Extreme Ultraviolet (EUV) Lithography X 10957, 166-180, 2019
52019
In situ reaction mechanism studies on the Ti (NMe2) 2 (OiPr) 2-D2O and Ti (OiPr) 3 [MeC (NiPr) 2]-D2O atomic layer deposition processes
Y Tomczak, K Knapas, M Leskelä, M Ritala
Journal of Vacuum Science & Technology A 32 (1), 2014
52014
Process of forming a gate of a semiconductor device
BT Chan, EA Sanchez, A Delabie, Y Tomczak
US Patent App. 16/597,629, 2020
22020
Method of forming a photoresist underlayer and structure including same
I Zyulkov, DK De Roest, Y Tomczak, ME Givens, P Sippola, T Ivanova, ...
US Patent App. 18/236,051, 2023
2023
Systemet kan ikke utføre handlingen. Prøv på nytt senere.
Artikler 1–20