| Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films Y Yu, C Li, Y Liu, L Su, Y Zhang, L Cao Scientific reports 3 (1), 1866, 2013 | 1012 | 2013 |
| Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Monolayer and Few-Layer MoS2 Films onto Arbitrary Substrates A Gurarslan, Y Yu, L Su, Y Yu, F Suarez, S Yao, Y Zhu, M Ozturk, Y Zhang, ... ACS nano 8 (11), 11522-11528, 2014 | 467 | 2014 |
| Equally Efficient Interlayer Exciton Relaxation and Improved Absorption in Epitaxial and Nonepitaxial MoS2/WS2 Heterostructures Y Yu, S Hu, L Su, L Huang, Y Liu, Z Jin, AA Purezky, DB Geohegan, ... Nano letters 15 (1), 486-491, 2015 | 413 | 2015 |
| Engineering substrate interactions for high luminescence efficiency of transition‐metal dichalcogenide monolayers Y Yu, Y Yu, C Xu, YQ Cai, L Su, Y Zhang, YW Zhang, K Gundogdu, L Cao Advanced Functional Materials 26 (26), 4733-4739, 2016 | 189 | 2016 |
| Effects of substrate type and material-substrate bonding on high-temperature behavior of monolayer WS2 L Su, Y Yu, L Cao, Y Zhang Nano Research 8, 2686-2697, 2015 | 124 | 2015 |
| Dependence of coupling of quasi 2-D MoS 2 with substrates on substrate types, probed by temperature dependent Raman scattering L Su, Y Zhang, Y Yu, L Cao Nanoscale 6 (9), 4920-4927, 2014 | 124 | 2014 |
| Thermopower study of GaN-based materials for next-generation thermoelectric devices and applications EN Hurwitz, M Asghar, A Melton, B Kucukgok, L Su, M Orocz, M Jamil, ... Journal of Electronic Materials 40, 513-517, 2011 | 64 | 2011 |
| Temperature coefficients of phonon frequencies and thermal conductivity in thin black phosphorus layers L Su, Y Zhang Applied Physics Letters 107 (7), 2015 | 62 | 2015 |
| Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes Y Lin, Y Zhang, Z Liu, L Su, J Zhang, T Wei, Z Chen Applied Physics Letters 101 (25), 2012 | 44 | 2012 |
| In Situ Monitoring of the Thermal-Annealing Effect in a Monolayer of L Su, Y Yu, L Cao, Y Zhang Physical Review Applied 7 (3), 034009, 2017 | 36 | 2017 |
| Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially … Y Lin, Y Zhang, Z Liu, L Su, J Zhang, T Wei, Z Chen Journal of Applied Physics 115 (2), 2014 | 28 | 2014 |
| Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition MK Indika Senevirathna, S Gamage, R Atalay, AR Acharya, ... Journal of Vacuum Science & Technology A 30 (3), 2012 | 20 | 2012 |
| Growth of oxidation-resistive silicene-like thin flakes and Si nanostructures on graphene N Yue, J Myers, L Su, W Wang, F Liu, R Tsu, Y Zhuang, Y Zhang Journal of Semiconductors 40 (6), 062001, 2019 | 10 | 2019 |
| Surface-enhanced Raman scattering of monolayer transition metal dichalcogenides on Ag nanorod arrays L Su, L Bradley, Y Yu, Y Yu, L Cao, Y Zhao, Y Zhang Optics Letters 44 (22), 5493-5496, 2019 | 4 | 2019 |
| Efficient interlayer relaxation and transition of excitons in epitaxial and non-epitaxial mos2/ws2 heterostructures Y Yu, S Hu, L Su, L Huang, Y Liu, Z Jin, AA Purezky, DB Geohegan, ... arXiv preprint arXiv:1403.6181, 2014 | 4 | 2014 |
| Investigation on a novel Fabry-Perot filter for high power tunable fiber laser L Su, Y Shen Zhongguo Jiguang(Chinese Journal of Lasers) 37 (9), 2351-2354, 2010 | 4 | 2010 |
| Kinetic energy dependence of carrier diffusion in a GaAs epilayer studied by wavelength selective PL imaging S Zhang, LQ Su, J Kon, T Gfroerer, MW Wanlass, Y Zhang Journal of Luminescence 185, 200-204, 2017 | 3 | 2017 |
| High Temperature Behavior of Monolayer WS2 and Its Interaction with Substrate: Dependence on Substrate Type and Bonding L Su, Y Yu, L Gao, Y Zhang Nano Res 8, 2686-2697, 2015 | 2 | 2015 |
| Correlative spectroscopic investigations of the mechanisms of inhomogeneity in CVD-grown monolayer WS2 L Su, Y Yu, L Cao, Y Zhang Science China Materials 66 (10), 3949-3957, 2023 | 1 | 2023 |
| Erratum:“Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes,”[Appl. Phys. Lett. 101, 252103 (2012)] Y Lin, Y Zhang, Z Liu, L Su, J Zhang, T Wei, Z Chen Applied Physics Letters 103 (11), 119902, 2013 | 1 | 2013 |
