Terje Finstad
Terje Finstad
Department of Physics, University of Oslo
Verified email at fys.uio.no
Title
Cited by
Cited by
Year
Phase stability, electronic structure, and optical properties of indium oxide polytypes
SZ Karazhanov, P Ravindran, P Vajeeston, A Ulyashin, TG Finstad, ...
Physical Review B 76 (7), 075129, 2007
2302007
Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon
K Cho, M Numan, TG Finstad, WK Chu, J Liu, JJ Wortman
Applied physics letters 47 (12), 1321-1323, 1985
1381985
Lattice-matched Sc1-xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductors
CJ Palmstrøm, S Mounier, TG Finstad, PF Miceli
Applied physics letters 56 (4), 382-384, 1990
891990
A Xe marker study of the transformation of Ni2Si to NiSi in thin films
TG Finstad
Physica status solidi (a) 63 (1), 223-228, 1981
801981
Reaction of silicon with films of Co Ni alloys: Phase separation of the monosilicides and nucleation of the disilicides
FM d'Heurle, DD Anfiteatro, VR Deline, TG Finstad
Thin Solid Films 128 (1-2), 107-124, 1985
731985
Channeling effect for low energy ion implantation in Si
K Cho, WR Allen, TG Finstad, WK Chu, J Liu, JJ Wortman
Nuclear Instruments and Methods in Physics Research B 7, 265-272, 1985
701985
Doping of p‐type ZnSb: Single parabolic band model and impurity band conduction
PHM Böttger, GS Pomrehn, GJ Snyder, TG Finstad
physica status solidi (a) 208 (12), 2753-2759, 2011
662011
Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy
U Serincan, G Kartopu, A Guennes, TG Finstad, R Turan, Y Ekinci, ...
Semiconductor science and technology 19 (2), 247, 2003
622003
Etch rates of (100),(111) and (110) single-crystal silicon in TMAH measured in situ by laser reflectance interferometry
E Steinsland, T Finstad, A Hanneborg
Sensors and Actuators A: Physical 86 (1-2), 73-80, 2000
612000
Design and construction of a four-point bending based set-up for measurement of piezoresistance in semiconductors
E Lund, TG Finstad
Review of scientific instruments 75 (11), 4960-4966, 2004
592004
Structural study of GaSb/AlSb strained-layer superlattice
CK Pan, DC Zheng, TG Finstad, WK Chu, VS Speriosu, MA Nicolet, ...
Physical Review B 31 (3), 1270, 1985
591985
Low temperature interdiffusion in Au/In thin film couples
J Bjøntegaard, L Buene, T Finstad, O Lønsjø, T Olsen
Thin Solid Films 101 (3), 253-262, 1983
571983
Silicide formation with nickel and platinum double layers on silicon
TG Finstad
Thin Solid Films 51 (3), 411-424, 1978
571978
Thermoelectric properties of Cu doped ZnSb containing Zn3P2 particles
K Valset, PHM Böttger, J Taftø, TG Finstad
Journal of Applied Physics 111 (2), 023703, 2012
562012
Self‐Aligned Ti Silicide Formed by Rapid Thermal Annealing
T Brat, CM Osburn, T Finstad, J Liu, B Ellington
Journal of the Electrochemical Society 133 (7), 1451, 1986
531986
The formation of disilicides from bilayers of Ni/Co and Co/Ni on silicon: Phase separation and solid solution
TG Finstad, DD Anfiteatro, VR Deline, FM d'Heurle, P Gas, VL Moruzzi, ...
Thin Solid Films 135 (2), 229-243, 1986
531986
AlAl thermocompression bonding for wafer-level MEMS sealing
N Malik, K Schjølberg-Henriksen, E Poppe, MMV Taklo, TG Finstad
Sensors and Actuators A: Physical 211, 115-120, 2014
492014
Silicide formation with bilayers of Pd‐Pt, Pd‐Ni, and Pt‐Ni
TG Finstad, MA Nicolet
Journal of Applied Physics 50 (1), 303-307, 1979
481979
The 1.54‐μ m photoluminescence from an (Er, Ge) co-doped Si O 2 film deposited on Si by rf magnetron sputtering
CL Heng, TG Finstad, P Storås, YJ Li, AE Gunnæs, O Nilsen
Applied physics letters 85 (19), 4475-4477, 2004
472004
The formation of NiSi from Ni2Si studied with a platinum marker
TG Finstad, JW Mayer, MA Nicolet
Thin Solid Films 51 (3), 391-394, 1978
471978
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Articles 1–20