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Arkka Bhattacharyya
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High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2
S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy
IEEE Electron Device Letters 42 (8), 1140-1143, 2021
1162021
Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window
A Bhattacharyya, P Ranga, S Roy, J Ogle, L Whittaker-Brooks, ...
Applied Physics Letters 117 (14), 2020
762020
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
A Bhattacharyya, P Ranga, S Roy, C Peterson, F Alema, G Seryogin, ...
IEEE Electron Device Letters 42 (9), 1272-1275, 2021
712021
Si-doped β-(Al0. 26Ga0. 74) 2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy
P Ranga, A Rishinaramangalam, J Varley, A Bhattacharyya, D Feezell, ...
Applied Physics Express 12 (11), 111004, 2019
712019
4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2
A Bhattacharyya, S Sharma, F Alema, P Ranga, S Roy, C Peterson, ...
Applied Physics Express 15 (6), 061001, 2022
602022
Delta-doped β-Ga2O3 thin films and β-(Al0. 26Ga0. 74) 2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
P Ranga, A Bhattacharyya, A Rishinaramangalam, YK Ooi, MA Scarpulla, ...
Applied Physics Express 13 (4), 045501, 2020
572020
Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics
Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ...
ACS Applied Materials & Interfaces 13 (34), 40817-40829, 2021
542021
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1− x) 2O3/β-Ga2O3 heterostructure channels
P Ranga, A Bhattacharyya, A Chmielewski, S Roy, R Sun, MA Scarpulla, ...
Applied Physics Express 14 (2), 025501, 2021
532021
Electrical and optical properties of Zr doped β-Ga2O3 single crystals
M Saleh, A Bhattacharyya, JB Varley, S Swain, J Jesenovec, ...
Applied Physics Express 12 (8), 085502, 2019
532019
Degenerate doping in β-Ga2O3 single crystals through Hf-doping
M Saleh, JB Varley, J Jesenovec, A Bhattacharyya, S Krishnamoorthy, ...
Semiconductor Science and Technology 35 (4), 04LT01, 2020
512020
130 mA mm− 1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
A Bhattacharyya, S Roy, P Ranga, D Shoemaker, Y Song, JS Lundh, ...
Applied Physics Express 14 (7), 076502, 2021
502021
Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric
A Bhattacharyya, P Ranga, M Saleh, S Roy, MA Scarpulla, KG Lynn, ...
IEEE Journal of the Electron Devices Society 8, 286-294, 2020
492020
High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2
A Bhattacharyya, S Roy, P Ranga, C Peterson, S Krishnamoorthy
IEEE Electron Device Letters 43 (10), 1637-1640, 2022
352022
Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown
S Roy, A Bhattacharyya, S Krishnamoorthy
IEEE Transactions on Electron Devices 67 (11), 4842-4848, 2020
342020
IEEE Trans. Electron Dev.
S Roy, A Bhattacharyya, S Krishnamoorthy
312020
Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy
P Ranga, A Bhattacharyya, A Chmielewski, S Roy, N Alem, ...
Applied Physics Letters 117 (17), 2020
262020
In Situ Dielectric Al2O3/β-Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
S Roy, A E Chmielewski, A Bhattacharyya, P Ranga, R Sun, ...
Advanced Electronic Materials 7 (11), 2100333, 2021
252021
β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit
S Roy, A Bhattacharyya, C Peterson, S Krishnamoorthy
IEEE Electron Device Letters 43 (12), 2037-2040, 2022
232022
N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium
P Ranga, A Bhattacharyya, L Whittaker-Brooks, MA Scarpulla, ...
Journal of Vacuum Science & Technology A 39 (3), 2021
192021
Synthesis and Characterization of Large‐Area Nanometer‐Thin β‐Ga2O3 Films from Oxide Printing of Liquid Metal Gallium
J Cooke, L Ghadbeigi, R Sun, A Bhattacharyya, Y Wang, MA Scarpulla, ...
physica status solidi (a) 217 (10), 1901007, 2020
192020
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