| High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2 S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy IEEE Electron Device Letters 42 (8), 1140-1143, 2021 | 137 | 2021 |
| Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window A Bhattacharyya, P Ranga, S Roy, J Ogle, L Whittaker-Brooks, ... Applied Physics Letters 117 (14), 2020 | 84 | 2020 |
| Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² A Bhattacharyya, P Ranga, S Roy, C Peterson, F Alema, G Seryogin, ... IEEE Electron Device Letters 42 (9), 1272-1275, 2021 | 78 | 2021 |
| Si-doped β-(Al0. 26Ga0. 74) 2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy P Ranga, A Rishinaramangalam, J Varley, A Bhattacharyya, D Feezell, ... Applied Physics Express 12 (11), 111004, 2019 | 74 | 2019 |
| 4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2 A Bhattacharyya, S Sharma, F Alema, P Ranga, S Roy, C Peterson, ... Applied Physics Express 15 (6), 061001, 2022 | 68 | 2022 |
| Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ... ACS Applied Materials & Interfaces 13 (34), 40817-40829, 2021 | 62 | 2021 |
| Delta-doped β-Ga2O3 thin films and β-(Al0. 26Ga0. 74) 2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy P Ranga, A Bhattacharyya, A Rishinaramangalam, YK Ooi, MA Scarpulla, ... Applied Physics Express 13 (4), 045501, 2020 | 62 | 2020 |
| 130 mA mm− 1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts A Bhattacharyya, S Roy, P Ranga, D Shoemaker, Y Song, JS Lundh, ... Applied Physics Express 14 (7), 076502, 2021 | 60 | 2021 |
| Electrical and optical properties of Zr doped β-Ga2O3 single crystals M Saleh, A Bhattacharyya, JB Varley, S Swain, J Jesenovec, ... Applied Physics Express 12 (8), 085502, 2019 | 60 | 2019 |
| Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1− x) 2O3/β-Ga2O3 heterostructure channels P Ranga, A Bhattacharyya, A Chmielewski, S Roy, R Sun, MA Scarpulla, ... Applied Physics Express 14 (2), 025501, 2021 | 59 | 2021 |
| Degenerate doping in β-Ga2O3 single crystals through Hf-doping M Saleh, JB Varley, J Jesenovec, A Bhattacharyya, S Krishnamoorthy, ... Semiconductor Science and Technology 35 (4), 04LT01, 2020 | 56 | 2020 |
| Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric A Bhattacharyya, P Ranga, M Saleh, S Roy, MA Scarpulla, KG Lynn, ... IEEE Journal of the Electron Devices Society 8, 286-294, 2020 | 54 | 2020 |
| High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2 A Bhattacharyya, S Roy, P Ranga, C Peterson, S Krishnamoorthy IEEE Electron Device Letters 43 (10), 1637-1640, 2022 | 45 | 2022 |
| 2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate S Roy, A Bhattacharyya, C Peterson, S Krishnamoorthy Applied Physics Letters 122 (15), 2023 | 38 | 2023 |
| Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown S Roy, A Bhattacharyya, S Krishnamoorthy IEEE Transactions on Electron Devices 67 (11), 4842-4848, 2020 | 37 | 2020 |
| β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit S Roy, A Bhattacharyya, C Peterson, S Krishnamoorthy IEEE Electron Device Letters 43 (12), 2037-2040, 2022 | 35 | 2022 |
| In Situ Dielectric Al2O3/β-Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition S Roy, A E Chmielewski, A Bhattacharyya, P Ranga, R Sun, ... Advanced Electronic Materials 7 (11), 2100333, 2021 | 30 | 2021 |
| Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy P Ranga, A Bhattacharyya, A Chmielewski, S Roy, N Alem, ... Applied Physics Letters 117 (17), 2020 | 29 | 2020 |
| Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers A Bhattacharyya, C Peterson, T Itoh, S Roy, J Cooke, S Rebollo, P Ranga, ... APL Materials 11 (2), 2023 | 28 | 2023 |
| N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium P Ranga, A Bhattacharyya, L Whittaker-Brooks, MA Scarpulla, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 25 | 2021 |
Sriram KrishnamoorthyUniversity of California, Santa BarbaraVerified email at ucsb.edu
