Improved hydrodynamical model for carrier transport in semiconductors AM Anile, O Muscato Physical Review B 51 (23), 16728, 1995 | 195 | 1995 |

A class of stochastic algorithms for the Wigner equation O Muscato, W Wagner SIAM Journal on Scientific Computing 38 (3), A1483-A1507, 2016 | 59 | 2016 |

Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors O Muscato, V Di Stefano Journal of Physics A: Mathematical and Theoretical 44 (10), 105501, 2011 | 51 | 2011 |

An energy transport model describing heat generation and conduction in silicon semiconductors O Muscato, V Di Stefano Journal of Statistical Physics 144, 171-197, 2011 | 41 | 2011 |

Extended thermodynamics tested beyond the linear regime: the case of electron transport in silicon semiconductors AM Anile, O Muscato Continuum Mechanics and Thermodynamics 8, 131-142, 1996 | 40 | 1996 |

Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations O Muscato, V Di Stefano COMPEL-The international journal for computation and mathematics in …, 2011 | 38 | 2011 |

Simulation of submicron silicon diodes with a non‐parabolic hydrodynamical model based on the maximum entropy principle O Muscato, V Romano VLSI Design 13 (1-4), 273-279, 2001 | 38 | 2001 |

Local equilibrium and off-equilibrium thermoelectric effects in silicon semiconductors O Muscato, V Di Stefano Journal of Applied Physics 110 (9), 2011 | 37 | 2011 |

The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models O Muscato Physica A: Statistical Mechanics and its Applications 289 (3-4), 422-458, 2001 | 33 | 2001 |

Moment equations with maximum entropy closure for carrier transport in semiconductor devices: validation in bulk silicon AM Anile, O Muscato, V Romano Vlsi Design 10 (4), 335-354, 2000 | 33 | 2000 |

Modeling heat generation in a submicrometric n+− n− n+ silicon diode O Muscato, V Di Stefano Journal of Applied Physics 104 (12), 2008 | 32 | 2008 |

A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation O Muscato, V Di Stefano, W Wagner Computers & Mathematics with Applications 65 (3), 520-527, 2013 | 29 | 2013 |

Seebeck effect in silicon semiconductors V Di Stefano, O Muscato Acta applicandae mathematicae 122, 225-238, 2012 | 29 | 2012 |

Numerical study of the systematic error in Monte Carlo schemes for semiconductors O Muscato, W Wagner, V Di Stefano ESAIM: Mathematical Modelling and Numerical Analysis 44 (5), 1049-1068, 2010 | 29 | 2010 |

Hydrodynamic modeling of silicon quantum wires O Muscato, V Di Stefano Journal of Computational Electronics 11, 45-55, 2012 | 28 | 2012 |

Monte Carlo and hydrodynamic simulation of a one dimensional n^{+}n n^{+} silicon diodeO Muscato, RM Pidatella, MV Fischetti VLSI Design 6 (1-4), 247-250, 1998 | 27 | 1998 |

Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver A Majorana, O Muscato, C Milazzo COMPEL-The international journal for computation and mathematics in …, 2004 | 26 | 2004 |

Monte Carlo evaluation of the transport coefficients in a n+–n–n+ silicon diode O Muscato COMPEL-The international journal for computation and mathematics in …, 2000 | 26 | 2000 |

Hydrodynamic simulation of a *n* ^{+} − *n* − *n* ^{+} silicon nanowireO Muscato, V Di Stefano Continuum Mechanics and Thermodynamics 26, 197-205, 2014 | 19 | 2014 |

Properties of the steady state distribution of electrons in semiconductors O Muscato, W Wagner, V Di Stefano Berlin: Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010 | 19 | 2010 |