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Martin Kuball
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The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
10532018
Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
M Kuball
Surface and Interface Analysis: An International Journal devoted to the …, 2001
4572001
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
M Kuball, JM Hayes, MJ Uren, I Martin, JCH Birbeck, RS Balmer, ...
IEEE Electron Device Letters 23 (1), 7-9, 2002
4132002
Buffer design to minimize current collapse in GaN/AlGaN HFETs
MJ Uren, J Moreke, M Kuball
IEEE Transactions on Electron Devices 59 (12), 3327-3333, 2012
3512012
Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices
A Sarua, H Ji, KP Hilton, DJ Wallis, MJ Uren, T Martin, M Kuball
IEEE Transactions on electron devices 54 (12), 3152-3158, 2007
3492007
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures
A Sarua, H Ji, M Kuball, MJ Uren, T Martin, KP Hilton, RS Balmer
IEEE Transactions on Electron Devices 53 (10), 2438-2447, 2006
3252006
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
M Kuball, S Rajasingam, A Sarua, MJ Uren, T Martin, BT Hughes, ...
Applied physics letters 82 (1), 124-126, 2003
2282003
A study of the phase diagram of (K, Na, Li) NbO3 determined by dielectric and piezoelectric measurements, and Raman spectroscopy
N Klein, E Hollenstein, D Damjanovic, HJ Trodahl, N Setter, M Kuball
Journal of Applied Physics 102 (1), 2007
2192007
“Leaky Dielectric” Model for the Suppression of Dynamic in Carbon-Doped AlGaN/GaN HEMTs
MJ Uren, S Karboyan, I Chatterjee, A Pooth, P Moens, A Banerjee, ...
IEEE Transactions on Electron Devices 64 (7), 2826-2834, 2017
2152017
Benchmarking of thermal boundary resistance in AlGaN/GaN HEMTs on SiC substrates: Implications of the nucleation layer microstructure
A Manoi, JW Pomeroy, N Killat, M Kuball
IEEE electron device letters 31 (12), 1395-1397, 2010
2092010
Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping
JW Pomeroy, M Bernardoni, DC Dumka, DM Fanning, M Kuball
Applied Physics Letters 104 (8), 2014
1842014
Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration
C Yuan, J Li, L Lindsay, D Cherns, JW Pomeroy, S Liu, JH Edgar, ...
Communications physics 2 (1), 43, 2019
1752019
Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications
H Sun, RB Simon, JW Pomeroy, D Francis, F Faili, DJ Twitchen, M Kuball
Applied Physics Letters 106 (11), 2015
1722015
Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy
M Kuball, GJ Riedel, JW Pomeroy, A Sarua, MJ Uren, T Martin, KP Hilton, ...
IEEE electron device letters 28 (2), 86-89, 2007
1672007
Raman scattering studies on single-crystalline bulk AlN under high pressures
M Kuball, JM Hayes, AD Prins, NWA Van Uden, DJ Dunstan, Y Shi, ...
Applied physics letters 78 (6), 724-726, 2001
1662001
Integrated optical and electrical analysis: Identifying location and properties of traps in AlGaN/GaN HEMTs during electrical stress
M Ťapajna, RJT Simms, Y Pei, UK Mishra, M Kuball
IEEE Electron Device Letters 31 (7), 662-664, 2010
1572010
Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section
M Silvestri, MJ Uren, M Kuball
Applied Physics Letters 102 (7), 2013
1542013
Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
A Chitnis, J Sun, V Mandavilli, R Pachipulusu, S Wu, M Gaevski, ...
Applied Physics Letters 81 (18), 3491-3493, 2002
1542002
Recombination dynamics in InGaN quantum wells
ES Jeon, V Kozlov, YK Song, A Vertikov, M Kuball, AV Nurmikko, H Liu, ...
Applied physics letters 69 (27), 4194-4196, 1996
1501996
Channel temperature determination in high-power AlGaN/GaN HFETs using electrical methods and Raman spectroscopy
RJT Simms, JW Pomeroy, MJ Uren, T Martin, M Kuball
IEEE Transactions on Electron Devices 55 (2), 478-482, 2008
1482008
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