| Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² A Bhattacharyya, P Ranga, S Roy, C Peterson, F Alema, G Seryogin, ... IEEE Electron Device Letters 42 (9), 1272-1275, 2021 | 71 | 2021 |
| 4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2 A Bhattacharyya, S Sharma, F Alema, P Ranga, S Roy, C Peterson, ... Applied Physics Express 15 (6), 061001, 2022 | 61 | 2022 |
| High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2 A Bhattacharyya, S Roy, P Ranga, C Peterson, S Krishnamoorthy IEEE Electron Device Letters 43 (10), 1637-1640, 2022 | 35 | 2022 |
| β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit S Roy, A Bhattacharyya, C Peterson, S Krishnamoorthy IEEE Electron Device Letters 43 (12), 2037-2040, 2022 | 23 | 2022 |
| Alloyed β-(AlxGa1− x) 2O3 bulk Czochralski single β-(Al0. 1Ga0. 9) 2O3 and polycrystals β-(Al0. 33Ga0. 66) 2O3, β-(Al0. 5Ga0. 5) 2O3), and property trends J Jesenovec, B Dutton, N Stone-Weiss, A Chmielewski, M Saleh, ... Journal of Applied Physics 131 (15), 2022 | 21 | 2022 |
| Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers A Bhattacharyya, C Peterson, T Itoh, S Roy, J Cooke, S Rebollo, P Ranga, ... APL Materials 11 (2), 2023 | 18 | 2023 |
| Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1−x)2O3 Films F Alema, C Peterson, A Bhattacharyya, S Roy, S Krishnamoorthy, ... IEEE Electron Device Letters 43 (10), 1649-1652, 2022 | 18 | 2022 |
| 2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate S Roy, A Bhattacharyya, C Peterson, S Krishnamoorthy Applied Physics Letters 122 (15), 2023 | 16 | 2023 |
| Alternative alloy to increase bandgap in gallium Oxide, β-(ScxGa1-x) 2O3, and rare earth Stark luminescence J Jesenovec, BL Dutton, C Remple, N Smith-Gray, M Murugesan, ... Journal of Crystal Growth 596, 126823, 2022 | 6 | 2022 |
| Alloyed ß-(AlxGa1-x) 2O3 Bulk Czochralski Single and Polycrystals with High Al Concentration (x= 0.5, 0.33, 0.1) J Jesenovec, BL Dutton, N Stone-Weiss, A Chmielewski, M Saleh, ... arXiv e-prints, arXiv: 2201.03673, 2022 | 6 | 2022 |
| Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF S Roy, B Kostroun, J Cooke, Y Liu, A Bhattacharyya, C Peterson, ... Applied Physics Letters 123 (24), 2023 | 4 | 2023 |
| Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm− 3) high-mobility (010) β-Ga2O3 drift layers A Bhattacharyya, C Peterson, K Chanchaiworawit, S Roy, Y Liu, ... Applied Physics Letters 124 (1), 2024 | 1 | 2024 |
| Record Low QCVF β-Ga 2 O 3 Vertical Trench High-k RESURF Schottky Barrier Diode with Turn-on Voltage of 0.5 V S Roy, B Kostroun, Y Liu, J Cooke, A Bhattacharyya, C Peterson, ... Authorea Preprints, 2024 | | 2024 |
| Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates C Peterson, F Alema, A Bhattacharyya, Z Ling, S Roy, A Osinsky, ... Applied Physics Letters 124 (8), 2024 | | 2024 |
| Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates C Peterson, F Alema, S Roy, A Osinsky, S Krishnamoorthy Authorea Preprints, 2023 | | 2023 |
| β-Ga2O3Dielectric Superjunction Schottky Barrier Diode Exceeding SiC Unipolar Figure of Merit: A Novel Approach to Realizing Superjunction Devices Without p … S Roy, A Bhattacharyya, C Peterson, S Krishnamoorthy 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022 | | 2022 |
| Ultrawide Bandgap β-Ga2O3 Transistors for Efficient Multi-Kilovolt Power Switching A Bhattacharyya, S Roy, C Peterson, F Alema, A Osinsky, ... 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-6, 2022 | | 2022 |
| 4.4 kV β-Ga2O3 MESFETs WITH POWER FIGURE OF MERIT EXCEEDING 100MW/cm2 S Roy, C Peterson, G Seryogin, A Osinsky, U Singisetti, S Krishnamoorthy STATEMENT OF DISSERTATION APPROVAL, 87, 2022 | | 2022 |
| Alloyed B-(AlxGa1-x) 2O3 bulk Czochralski single B-(Al0. 1Ga0. 9) 2O3 and polycrystals B-(Al0. 33Ga0. 66) 2O3, B-(Al0. 5Ga0. 5) 2O3), and property trends J Jesenovec, BL Dutton, N Stone-Weiss, A Chmielewski, M Saleh, ... arXiv preprint arXiv:2201.03673, 2022 | | 2022 |
| 4.4 kV β-Ga2O3 Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2 A Bhattacharyya, S Sharma, F Alema, P Ranga, S Roy, C Peterson, ... | | |
Sriram KrishnamoorthyUniversity of California, Santa BarbaraVerified email at ucsb.edu
