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H Aruni Fonseka
H Aruni Fonseka
Department of Physics, University of Warwick
Verified email at warwick.ac.uk
Title
Cited by
Cited by
Year
Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control
HA Fonseka, P Caroff, J Wong-Leung, AS Ameruddin, HH Tan, ...
ACS nano 8 (7), 6945-6954, 2014
692014
Bandgap energy of wurtzite InAs nanowires
MB Rota, AS Ameruddin, HA Fonseka, Q Gao, F Mura, A Polimeni, ...
Nano letters 16 (8), 5197-5203, 2016
622016
Temperature dependence of interband transitions in wurtzite InP nanowires
A Zilli, M De Luca, D Tedeschi, HA Fonseka, A Miriametro, HH Tan, ...
ACS nano 9 (4), 4277-4287, 2015
522015
Polarized light absorption in wurtzite InP nanowire ensembles
M De Luca, A Zilli, HA Fonseka, S Mokkapati, A Miriametro, HH Tan, ...
Nano letters 15 (2), 998-1005, 2015
512015
Long-lived hot carriers in III–V nanowires
D Tedeschi, M De Luca, HA Fonseka, Q Gao, F Mura, HH Tan, S Rubini, ...
Nano Letters 16 (5), 3085-3093, 2016
482016
InxGa1− xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
AS Ameruddin, HA Fonseka, P Caroff, J Wong-Leung, RLMO het Veld, ...
Nanotechnology 26 (20), 205604, 2015
472015
Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing
S Skalsky, Y Zhang, JA Alanis, HA Fonseka, AM Sanchez, H Liu, ...
Light: Science & Applications 9 (1), 43, 2020
292020
Growth of pure zinc-blende GaAs (P) core–shell nanowires with highly regular morphology
Y Zhang, HA Fonseka, M Aagesen, JA Gott, AM Sanchez, J Wu, D Kim, ...
Nano letters 17 (8), 4946-4950, 2017
292017
Magneto-optical properties of wurtzite-phase InP nanowires
M De Luca, A Polimeni, HA Fonseka, AJ Meaney, PCM Christianen, ...
Nano letters 14 (8), 4250-4256, 2014
272014
High vertical yield InP nanowire growth on Si (111) using a thin buffer layer
HA Fonseka, HH Tan, J Wong-Leung, JH Kang, P Parkinson, C Jagadish
Nanotechnology 24 (46), 465602, 2013
272013
Highly Strained III–V–V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement
Y Zhang, G Davis, HA Fonseka, A Velichko, A Gustafsson, T Godde, ...
ACS nano, 2019
242019
Stable defects in semiconductor nanowires
AM Sanchez, JA Gott, HA Fonseka, Y Zhang, H Liu, R Beanland
Nano Letters 18 (5), 3081-3087, 2018
222018
Growth and fabrication of high‐quality single nanowire devices with radial p‐i‐n junctions
Y Zhang, AM Sanchez, M Aagesen, S Huo, HA Fonseka, JA Gott, D Kim, ...
Small 15 (3), 1803684, 2019
202019
Self-formed quantum wires and dots in GaAsP–GaAsP core–shell nanowires
HA Fonseka, AV Velichko, Y Zhang, JA Gott, GD Davis, R Beanland, H Liu, ...
Nano letters 19 (6), 4158-4165, 2019
192019
Defect-free axially stacked GaAs/GaAsP nanowire quantum dots with strong carrier confinement
Y Zhang, AV Velichko, HA Fonseka, P Parkinson, JA Gott, G Davis, ...
Nano Letters 21 (13), 5722-5729, 2021
172021
Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation
P Perla, HA Fonseka, P Zellekens, R Deacon, Y Han, J Kölzer, T Mörstedt, ...
Nanoscale Advances 3 (5), 1413-1421, 2021
172021
Robust Protection of III–V Nanowires in Water Splitting by a Thin Compact TiO2 Layer
F Cui, Y Zhang, HA Fonseka, P Promdet, AI Channa, M Wang, X Xia, ...
ACS Applied Materials & Interfaces 13 (26), 30950-30958, 2021
132021
InP–In x Ga 1− x As core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range
HA Fonseka, AS Ameruddin, P Caroff, D Tedeschi, M De Luca, F Mura, ...
Nanoscale 9 (36), 13554-13562, 2017
122017
Preferred growth direction of III–V nanowires on differently oriented Si substrates
H Zeng, X Yu, HA Fonseka, G Boras, P Jurczak, T Wang, AM Sanchez, ...
Nanotechnology 31 (47), 475708, 2020
92020
Hole and electron effective masses in single InP nanowires with a wurtzite-zincblende homojunction
D Tedeschi, HA Fonseka, E Blundo, A Granados del Águila, Y Guo, ...
ACS nano 14 (9), 11613-11622, 2020
92020
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