Brian R. Bennett
Brian R. Bennett
Washington-Liberty High School; formerly Naval Research Laboratory (NRL), ONR, and MIT
Verified email at - Homepage
Cited by
Cited by
Electrooptical effects in silicon
R Soref, B Bennett
IEEE journal of quantum electronics 23 (1), 123-129, 1987
Carrier-induced change in refractive index of InP, GaAs and InGaAsP
BR Bennett, RA Soref, JA Del Alamo
IEEE Journal of Quantum Electronics 26 (1), 113-122, 1990
Robust electrical spin injection into a semiconductor heterostructure
BT Jonker, YD Park, BR Bennett, HD Cheong, G Kioseoglou, A Petrou
Physical Review B 62 (12), 8180, 2000
Observation of spin injection at a ferromagnet-semiconductor interface
PR Hammar, BR Bennett, MJ Yang, M Johnson
Physical Review Letters 83 (1), 203, 1999
Antimonide-based compound semiconductors for electronic devices: A review
BR Bennett, R Magno, JB Boos, W Kruppa, MG Ancona
Solid-State Electronics 49 (12), 1875-1895, 2005
Kramers-Kronig analysis of electro-optical switching in silicon
RA Soref, BR Bennett
Integrated Optical Circuit Engineering IV 704, 32-37, 1987
Hybrid Hall effect device
M Johnson, BR Bennett, MJ Yang, MM Miller, BV Shanabrook
Applied Physics Letters 71 (7), 974-976, 1997
Evidence of a Hybridization Gap in``Semimetallic''InAs/GaSb Systems
MJ Yang, CH Yang, BR Bennett, BV Shanabrook
Physical review letters 78 (24), 4613, 1997
Auger coefficients in type-II quantum wells
JR Meyer, CL Felix, WW Bewley, I Vurgaftman, EH Aifer, LJ Olafsen, ...
Applied physics letters 73 (20), 2857-2859, 1998
Photoluminescence studies of self‐assembled InSb, GaSb, and AlSb quantum dot heterostructures
ER Glaser, BR Bennett, BV Shanabrook, R Magno
Applied physics letters 68 (25), 3614-3616, 1996
Surface reconstruction phase diagrams for InAs, AlSb, and GaSb
AS Bracker, MJ Yang, BR Bennett, JC Culbertson, WJ Moore
Journal of crystal growth 220 (4), 384-392, 2000
Molecular beam epitaxial growth of InSb, GaSb, and AlSb nanometer‐scale dots on GaAs
BR Bennett, R Magno, BV Shanabrook
Applied physics letters 68 (4), 505-507, 1996
AlSb/InAs HEMT's for low-voltage, high-speed applications
JB Boos, W Kruppa, BR Bennett, D Park, SW Kirchoefer, R Bass, ...
IEEE Transactions on electron devices 45 (9), 1869-1875, 1998
Nanostructure patterns written in III–V semiconductors by an atomic force microscope
R Magno, BR Bennett
Applied Physics Letters 70 (14), 1855-1857, 1997
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ...
Applied Physics Letters 97 (14), 2010
Mobility enhancement in strained p-InGaSb quantum wells
BR Bennett, MG Ancona, JB Boos, BV Shanabrook
Applied Physics Letters 91 (4), 2007
Optimization of the Interface and a High-Mobility GaSb pMOSFET
A Nainani, T Irisawa, Z Yuan, BR Bennett, JB Boos, Y Nishi, KC Saraswat
IEEE Transactions on Electron Devices 58 (10), 3407-3415, 2011
Electrorefraction and electroabsorption in InP, GaAs, GaSb, InAs, and InSb
B Bennett, R Soref
IEEE journal of quantum electronics 23 (12), 2159-2166, 1987
Metallic III-V (001) surfaces: Violations of the electron counting model
LJ Whitman, PM Thibado, SC Erwin, BR Bennett, BV Shanabrook
Physical review letters 79 (4), 693, 1997
Long‐Period Magnetotelluric Measurements Near the Central California Coast: A Land‐Locked View of the Conductivity Structure Under the Pacific Ocean
RL Mackie, BR Bennett, TR Madden
Geophysical Journal 95 (1), 181-194, 1988
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