Seung H. Kang
Cited by
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45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell
CJ Lin, SH Kang, YJ Wang, K Lee, X Zhu, WC Chen, X Li, WN Hsu, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Development of Embedded STT-MRAM for Mobile System-on-Chips
K Lee, SH Kang
IEEE Transactions on Magnetics 47, 2011
Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)
C Park, K Lee, SH Kang
US Patent 9,379,314, 2016
MTJ structure and integration scheme
X Li, SH Kang, MM Nowak
US Patent 8,866,242, 2014
A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM)
J Kim, K Ryu, SH Kang, SO Jung
IEEE Transactions on VLSI Systems 20 (1), 2012
Spin-Transfer Switching Magnetic Element Utilizing a Composite Free Layer Comprising a Superparamagnetic Layer
WC Chen, SH Kang
US Patent 8,362,580, 2013
A 45nm 1 Mb Embedded STT-MRAM with Design Techniques to Minimize Read-Disturbance
JP Kim, T Kim, W Hao, HM Rao, K Lee, X Zhu, W Hsu, SH Kang, M Nowak, ...
VLSI Symposia, 2011
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang
US Patent 9,634,237, 2017
Fabricating a magnetic tunnel junction storage element
WC Chen, SH Kang
US Patent 8,981,502, 2015
Strain induced reduction of switching current in spin-transfer torque switching devices
X Zhu, X Li, WC Chen, SH Kang
US Patent 8,704,320, 2014
Invalid Write Prevention for STT-MRAM Array
K Ryu, J Kim, SO Jung, SH Kang
US Patent 8,432,727, 2013
Amorphous alloy space for perpendicular MTJs
K Lee, WC Chen, S Kang
US Patent 9,548,445, 2017
Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device
WC Chen, K Lee, X Zhu, SH Kang
US Patent 9,935,258, 2018
Memory Cell and Method of Forming a Magnetic Tunnel junction (MTJ) of a Memory Cell
S Gu, SH Kang, M Nowak
US Patent 7,919,794, 2011
Design Consideration of Magnetic Tunnel Junctions for Reliable High-Temperature Operation of STT-MRAM
K Lee, SH Kang
IEEE Transactions on Magnetics 46, 2010
A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop
K Ryu, J Kim, JP Kim, SH Kang, SO Jung
IEEE Transactions on VLSI Systems 20, 2012
Write Operation for Spin Torque Magnetoresistive Random Access Memory with Reduced Bit Cell Size
SO Jung, MH Sani, SH Kang, SS Yoon
US Patent 8,144,509, 2012
Emerging Materials and Devices in Spintronic Integrated Circuits for Energy-Smart Mobile Computing and Connectivity
SH Kang, K Lee
Acta Materialia 61, 2013
Magnetic Tunnel Junction Cell Including Multiple Vertical Magnetic Domains
X Li, SH Kang, X Zhu
US Patent 7,885,105, 2011
Magnetic Tunnel Junction Device and Fabrication
K Lee, X Zhu, X Li, SH Kang
US Patent 8,120,126, 2012
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