Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface T Nishimura, K Kita, A Toriumi Applied Physics Letters 91 (12), 2007 | 576 | 2007 |
Origin of electric dipoles formed at high-k/SiO2 interface K Kita, A Toriumi Applied Physics Letters 94 (13), 2009 | 429 | 2009 |
Contact resistivity and current flow path at metal/graphene contact K Nagashio, T Nishimura, K Kita, A Toriumi Applied Physics Letters 97 (14), 2010 | 412 | 2010 |
Direct evidence of GeO volatilization from GeO2/Ge and impact of its suppression on GeO2/Ge metal–insulator–semiconductor characteristics K Kita, S Suzuki, H Nomura, T Takahashi, T Nishimura, A Toriumi Japanese journal of applied physics 47 (4S), 2349, 2008 | 282 | 2008 |
A significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film T Nishimura, K Kita, A Toriumi Applied physics express 1 (5), 051406, 2008 | 264 | 2008 |
Dielectric constant enhancement due to Si incorporation into HfO2 K Tomida, K Kita, A Toriumi Applied physics letters 89 (14), 2006 | 237 | 2006 |
Electrical transport properties of graphene on SiO2 with specific surface structures K Nagashio, T Yamashita, T Nishimura, K Kita, A Toriumi Journal of Applied Physics 110 (2), 2011 | 231 | 2011 |
Permittivity increase of yttrium-doped HfO2 through structural phase transformation K Kita, K Kyuno, A Toriumi Applied Physics Letters 86 (10), 2005 | 227 | 2005 |
Metal/graphene contact as a performance killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance K Nagashio, T Nishimura, K Kita, A Toriumi 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 225 | 2009 |
Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon Y Zhao, M Toyama, K Kita, K Kyuno, A Toriumi Applied Physics Letters 88 (7), 2006 | 217 | 2006 |
Desorption kinetics of GeO from GeO2/Ge structure SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi Journal of applied physics 108 (5), 2010 | 209 | 2010 |
In-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100),[110], and (111) Si H Irie, K Kita, K Kyuno, A Toriumi IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 194 | 2004 |
Mobility variations in mono-and multi-layer graphene films K Nagashio, T Nishimura, K Kita, A Toriumi Applied physics express 2 (2), 025003, 2009 | 187 | 2009 |
Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi ECS Transactions 19 (1), 165, 2009 | 185 | 2009 |
Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio Microelectronic Engineering 86 (7-9), 1571-1576, 2009 | 179 | 2009 |
Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator Y Yamamoto, K Kita, K Kyuno, A Toriumi Applied Physics Letters 89 (3), 2006 | 161 | 2006 |
High-Electron-Mobilityn-MOSFETs With Two-Step Oxidation CH Lee, T Nishimura, K Nagashio, K Kita, A Toriumi IEEE transactions on electron devices 58 (5), 1295-1301, 2011 | 156 | 2011 |
Study of La-induced flat band voltage shift in metal/HfLaOx/SiO2/Si capacitors Y Yamamoto, K Kita, K Kyuno, A Toriumi Japanese Journal of Applied Physics 46 (11R), 7251, 2007 | 144 | 2007 |
Systematic investigation of the intrinsic channel properties and contact resistance of monolayer and multilayer graphene field-effect transistor K Nagashio, T Nishimura, K Kita, A Toriumi Japanese Journal of Applied Physics 49 (5R), 051304, 2010 | 126 | 2010 |
Impact of Ta diffusion on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO N Miyakawa, DC Worledge, K Kita IEEE Magnetics Letters 4, 1000104-1000104, 2013 | 114 | 2013 |