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Antonio Garcia-Loureiro
Antonio Garcia-Loureiro
Department of Electronics and Computer Science. Universidad de Santiago de Compostela
Verified email at usc.es
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Cited by
Cited by
Year
FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability
D Nagy, G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, ...
IEEE Journal of the Electron Devices Society 6, 332-340, 2018
2032018
Outdoor evaluation of concentrator photovoltaic systems modules from different manufacturers: first results and steps
EF Fernández, P Pérez‐Higueras, AJ Garcia Loureiro, PG Vidal
Progress in Photovoltaics: Research and Applications 21 (4), 693-701, 2013
1002013
A two subcell equivalent solar cell model for III–V triple junction solar cells under spectrum and temperature variations
EF Fernández, G Siefer, F Almonacid, AJG Loureiro, P Pérez-Higueras
Solar Energy 92, 221-229, 2013
792013
Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors
AJ Garcia-Loureiro, N Seoane, M Aldegunde, R Valin, A Asenov, ...
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2011
782011
Benchmarking of FinFET, nanosheet, and nanowire FET architectures for future technology nodes
D Nagy, G Espineira, G Indalecio, AJ Garcia-Loureiro, K Kalna, N Seoane
IEEE Access 8, 53196-53202, 2020
702020
Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs FinFET
N Seoane, G Indalecio, E Comesana, M Aldegunde, AJ Garcia-Loureiro, ...
IEEE Transactions on Electron Devices 61 (2), 466-472, 2013
612013
Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz
Solid-State Electronics 54 (2), 131-136, 2010
532010
Temperature coefficients of monolithic III-V triple-junction solar cells under different spectra and irradiance levels
EF Fernández, G Siefer, M Schachtner, AJ García Loureiro, ...
AIP conference proceedings 1477 (1), 189-193, 2012
522012
Multijunction Concentrator Solar Cells: Analysis and Fundamentals
EF Fernández, AJ García-Loureiro, GP Smestad
High Concentrator Photovoltaics: Fundamentals, Engineering and Power Plants …, 2015
492015
3D finite element Monte Carlo simulations of multigate nanoscale transistors
M Aldegunde, AJ García-Loureiro, K Kalna
IEEE transactions on electron devices 60 (5), 1561-1567, 2013
482013
Quantum corrections based on the 2-D Schrödinger equation for 3-D finite element Monte Carlo simulations of nanoscaled FinFETs
J Lindberg, M Aldegunde, D Nagy, WG Dettmer, K Kalna, ...
IEEE Transactions on Electron Devices 61 (2), 423-429, 2014
472014
Benchmarking of scaled InGaAs implant-free nanoMOSFETs
K Kalna, N Seoane, AJ Garcia-Loureiro, IG Thayne, A Asenov
IEEE transactions on electron devices 55 (9), 2297-2306, 2008
472008
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ...
IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016
452016
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ...
Solid-State Electronics 128, 17-24, 2017
432017
Impact of series and shunt resistances in amorphous silicon thin film solar cells
M Fortes, E Comesana, JA Rodriguez, P Otero, AJ Garcia-Loureiro
Solar Energy 100, 114-123, 2014
412014
Impact of gate edge roughness variability on FinFET and gate-all-around nanowire FET
G Espineira, D Nagy, G Indalecio, AJ Garcia-Loureiro, K Kalna, N Seoane
IEEE Electron Device Letters 40 (4), 510-513, 2019
342019
Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
N Seoane, JG Fernandez, K Kalna, E Comesana, A Garcia-Loureiro
IEEE Electron Device Letters 42 (10), 1416-1419, 2021
312021
Monolithic III-V triple-junction solar cells under different temperatures and spectra
EF Fernández, AJGG Loureiro, PJPP Higueras, G Siefer
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-4, 2011
312011
Study of metal-gate work-function variation using Voronoi cells: Comparison of Rayleigh and gamma distributions
G Indalecio, AJ Garcia-Loureiro, NS Iglesias, K Kalna
IEEE Transactions on Electron Devices 63 (6), 2625-2628, 2016
292016
Vertical-tunnel-junction (VTJ) solar cell for ultra-high light concentrations (> 2000 suns)
EF Fernández, N Seoane, F Almonacid, AJ García-Loureiro
IEEE Electron Device Letters 40 (1), 44-47, 2018
282018
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