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emanuela schilirò
emanuela schilirò
cnr-imm
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Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate
SE Panasci, E Schilirò, G Greco, M Cannas, FM Gelardi, S Agnello, ...
ACS Applied Materials & Interfaces 13 (26), 31248-31259, 2021
582021
Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer
G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ...
ACS applied materials & interfaces 9 (8), 7761-7771, 2017
452017
Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
E Schilirò, R Lo Nigro, P Fiorenza, F Roccaforte
AIP Advances 6 (7), 2016
452016
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures
F Giannazzo, E Schilirò, G Greco, F Roccaforte
Nanomaterials 10 (4), 803, 2020
412020
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy
F Giannazzo, M Bosi, F Fabbri, E Schilirò, G Greco, F Roccaforte
physica status solidi (RRL)–Rapid Research Letters 14 (2), 1900393, 2020
362020
High-performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
F Giannazzo, G Greco, E Schilirò, R Lo Nigro, I Deretzis, A La Magna, ...
ACS Applied Electronic Materials 1 (11), 2342-2354, 2019
362019
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
RL Nigro, E Schilirò, G Mannino, S Di Franco, F Roccaforte
Journal of Crystal Growth 539, 125624, 2020
322020
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation
SE Panasci, E Schilirò, F Migliore, M Cannas, FM Gelardi, F Roccaforte, ...
Applied Physics Letters 119 (9), 2021
312021
Monolayer graphene doping and strain dynamics induced by thermal treatments in controlled atmosphere
A Armano, G Buscarino, M Cannas, FM Gelardi, F Giannazzo, E Schilirò, ...
Carbon 127, 270-279, 2018
312018
Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide
E Schilirò, R Lo Nigro, F Roccaforte, I Deretzis, A La Magna, A Armano, ...
Advanced Materials Interfaces 6 (10), 1900097, 2019
272019
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
E Schilirò, RL Nigro, SE Panasci, FM Gelardi, S Agnello, R Yakimova, ...
Carbon 169, 172-181, 2020
252020
Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy
F Giannazzo, I Shtepliuk, IG Ivanov, T Iakimov, A Kakanakova-Georgieva, ...
Nanotechnology 30 (28), 284003, 2019
252019
Recent advances in seeded and seed-layer-free atomic layer deposition of high-K dielectrics on graphene for electronics
E Schilirò, R Lo Nigro, F Roccaforte, F Giannazzo
C 5 (3), 53, 2019
242019
Structural and insulating behaviour of high-permittivity binary oxide thin films for silicon carbide and gallium nitride electronic devices
R Lo Nigro, P Fiorenza, G Greco, E Schilirò, F Roccaforte
Materials 15 (3), 830, 2022
222022
Advances in the fabrication of graphene transistors on flexible substrates
G Fisichella, SL Verso, S Di Marco, V Vinciguerra, E Schilirò, S Di Franco, ...
Beilstein Journal of Nanotechnology 8 (1), 467-474, 2017
222017
Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications
RL Nigro, E Schilirò, G Greco, P Fiorenza, F Roccaforte
Thin Solid Films 601, 68-72, 2016
212016
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization
SE Panasci, A Koos, E Schilirò, S Di Franco, G Greco, P Fiorenza, ...
Nanomaterials 12 (2), 182, 2022
192022
Atomic layer deposition of high-k insulators on epitaxial graphene: A review
F Giannazzo, E Schilirò, R Lo Nigro, F Roccaforte, R Yakimova
Applied Sciences 10 (7), 2440, 2020
182020
Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions
F Giannazzo, SE Panasci, E Schilirò, F Roccaforte, A Koos, M Nemeth, ...
Advanced Materials Interfaces 9 (22), 2200915, 2022
162022
Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors
F Giannazzo, G Fisichella, G Greco, E Schilirò, I Deretzis, R Lo Nigro, ...
physica status solidi (a) 215 (10), 1700653, 2018
162018
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Artikler 1–20