| Comparative Study of Various Latch-Type Sense Amplifiers T Na, SH Woo, J Kim, H Jeong, SO Jung IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22 (2), 425-249, 2014 | 97 | 2014 |
| STT-MRAM Sensing: A Review T Na, SH Kang, SO Jung IEEE Transactions on Circuits and Systems II: Express Briefs 68 (1), 12-18, 2021 | 66 | 2021 |
| A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and Compact Area B Song, T Na, JP Kim, SH Kang, SO Jung IEEE Transactions on Circuits and Systems II: Express Briefs 64 (6), 700-704, 2017 | 56 | 2017 |
| Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM T Na, J Kim, JP Kim, SH Kang, SO Jung IEEE Transactions on Circuits and Systems I: Regular Papers 61 (12), 3376 - 3385, 2014 | 54 | 2014 |
| Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS T Na, B Song, JP Kim, SH Kang, SO Jung IEEE Journal of Solid-State Circuits 52 (2), 496-504, 2017 | 53 | 2017 |
| An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM T Na, J Kim, JP Kim, SH Kang, SO Jung IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22 (7 …, 2014 | 42 | 2014 |
| A Comparative Study of STT-MTJ based Non-Volatile Flip-Flops T Na, K Ryu, J Kim, SH Kang, SO Jung IEEE International Symposium on Circuits and Systems (ISCAS) 2013, 109-112, 2013 | 37 | 2013 |
| Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM B Song, T Na, J Kim, JP Kim, SH Kang, SO Jung IEEE Transactions on Circuits and Systems I: Regular Papers 62 (7), 1776-1784, 2015 | 35 | 2015 |
| High-Performance Low-Power Magnetic Tunnel Junction Based Non-Volatile Flip-Flop T Na, K Ryu, J Kim, JP Kim, SH Kang, SO Jung IEEE International Symposium on Circuits and Systems (ISCAS) 2014, 1953-1956, 2014 | 34 | 2014 |
| A Split-Path Sensing Circuit for Spin Torque Transfer MRAM J Kim, T Na, JP Kim, SH Kang, SO Jung IEEE Transactions on Circuits and Systems II: Express Briefs 61 (3), 193-197, 2014 | 34 | 2014 |
| A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory T Na, J Kim, JP Kim, SH Kang, SO Jung IEEE Transactions on Circuits and Systems II: Express Briefs 62 (12), 1109-1113, 2015 | 29 | 2015 |
| An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM T Na, J Kim, B Song, JP Kim, SH Kang, SO Jung IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (4 …, 2016 | 24 | 2016 |
| Read Disturbance Reduction Technique for Offset-Canceling Dual-Stage Sensing Circuits in Deep Submicrometer STT-RAM T Na, JP Kim, S Kang, SO Jung IEEE Transactions on Circuits and Systems II: Express Briefs 63 (6), 578-582, 2016 | 19 | 2016 |
| Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs)(CLSAs)(OCZS-SAs) for sensing differential … T Na, BK Song, SO Jung, JP Kim, SH Kang US Patent 9,852,783, 2017 | 16 | 2017 |
| Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM T Na, B Song, JP Kim, SH Kang, SO Jung IEEE Transactions on Circuits and Systems I: Regular Papers 65 (1), 163-174, 2018 | 15 | 2018 |
| System, Apparatus, and Method for Sense Amplifier SO Jung, T Na, J Kim, JP Kim, SH Kang, Q Incorporated US Patent 9,378,781, 2016 | 15 | 2016 |
| Offset-canceling single-ended sensing scheme with one-bit-line precharge architecture for resistive nonvolatile memory in 65-nm CMOS T Na, B Song, S Choi, JP Kim, SH Kang, SO Jung IEEE Transactions on Very Large Scale Integration (VLSI) Systems 27 (11 …, 2019 | 14 | 2019 |
| Latch offset cancelation for magnetoresistive random access memory SO Jung, T Na, S Byungkyu, JP Kim, SH Kang US Patent 9,691,462, 2017 | 14 | 2017 |
| System and Method of Sensing a Memory Cell SO Jung, T Na, J Kim, SH Kang, JP Kim, IAC Foundation, Q Incorporated US Patent App. 13/835,251, 2013 | 14 | 2013 |
| Offset Canceling Dual Stage Sensing Circuit SO Jung, T Na, J Kim, JP Kim, SH Kang, Q Incorporated, IAC Foundation US Patent 9,165,630, 2015 | 12 | 2015 |
Seong-Ook JungProfessor of Electrical and Electronic Engineering, Yonsei UniversityVerified email at yonsei.ac.kr
