| High-speed light modulation in avalanche breakdown mode for Si diodes A Chatterjee, B Bhuva, R Schrimpf IEEE Electron Device Letters 25 (9), 628-630, 2004 | 86 | 2004 |
| The principle of operation of the avalanche transistor-based Marx bank circuit: A new perspective A Chatterjee, K Mallik, SM Oak Review of scientific instruments 69 (5), 2166-2170, 1998 | 39 | 1998 |
| All Si-based optical interconnect for interchip signal transmission A Chatterjee, P Mongkolkachit, B Bhuva, A Verma IEEE Photonics Technology Letters 15 (11), 1663-1665, 2003 | 37 | 2003 |
| Circuit modeling and performance analysis of photoconductive antenna J Prajapati, M Bharadwaj, A Chatterjee, R Bhattacharjee Optics Communications 394, 69-79, 2017 | 36 | 2017 |
| Studies of charge carrier trapping and recombination processes in Si∕ SiO2∕ MgO structures using second-harmonic generation YV White, X Lu, R Pasternak, NH Tolk, A Chatterjee, RD Schrimpf, ... Applied Physics Letters 88 (6), 2006 | 29 | 2006 |
| A high precision lumped parameter model for piezoelectric energy harvesters S Baishya, D Borthakur, R Kashyap, A Chatterjee IEEE Sensors Journal 17 (24), 8350-8355, 2017 | 19 | 2017 |
| Accelerated stressing and degradation mechanisms for Si-based photo-emitters A Chatterjee, A Verma, B Bhuva, ED Jansen, WC Lin 2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001 | 19 | 2001 |
| A microscopic understanding of nanometer scale DENMOS failure mechanism under ESD conditions A Chatterjee, S Pendharkar, YY Lin, C Duvvury, K Banerjee 2007 IEEE International Electron Devices Meeting, 181-184, 2007 | 17 | 2007 |
| A methodology for designing LVDS interface system S Verma, A Chatterjee 2016 Sixth International Symposium on Embedded Computing and System Design …, 2016 | 14 | 2016 |
| An insight into the ESD behavior of the nanometer-scale drain-extended NMOS device—Part I: Turn-on behavior of the parasitic bipolar A Chatterjee, M Shrivastava, H Gossner, S Pendharkar, F Brewer, ... IEEE Transactions on Electron Devices 58 (2), 309-317, 2011 | 13 | 2011 |
| New physical insight and modeling of second breakdown (It/sub 2/) phenomenon in advanced esd protection devices A Chatterjee, C Duvvury, K Banerjee IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 13 | 2005 |
| Breakdown of transistors in Marx bank circuit A Chatterjee Solid-State Electronics 44 (9), 1679-1684, 2000 | 13 | 2000 |
| 2-D analytical modeling of surface potential and threshold voltage for vertical super-thin body FET S Roy, A Chatterjee, DK Sinha, R Pirogova, S Baishya IEEE Transactions on Electron Devices 64 (5), 2106-2112, 2017 | 12 | 2017 |
| Magnetic field-assisted radiation enhancement from a large aperture photoconductive antenna J Prajapati, M Bharadwaj, A Chatterjee, R Bhattacharjee IEEE Transactions on Microwave Theory and Techniques 66 (2), 678-687, 2018 | 11 | 2018 |
| An insight into the high current ESD behavior of drain extended NMOS (DENMOS) devices in nanometer scale CMOS technologies A Chatterjee, S Pendharkar, YY Lin, C Duvvury, K Banerjee 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 11 | 2007 |
| Mechanisms leading to erratic snapback behavior in bipolar junction transistors with base emitter shorted A Chatterjee, RD Schrimpf, S Pendharkar, K Banerjee Journal of applied physics 97 (8), 2005 | 10 | 2005 |
| 3D device modeling of damage due to filamentation under an ESD event in nanometer scale drain extended NMOS (DE-NMOS) A Chatterjee, S Pendharkar, H Gossner, C Duvvury, K Banerjee 2008 IEEE International Reliability Physics Symposium, 639-640, 2008 | 8 | 2008 |
| An insight into ESD behavior of nanometer-scale drain extended NMOS (DeNMOS) devices: Part II (two-dimensional study-biasing & comparison with NMOS) A Chatterjee, M Shrivastava, H Gossner, S Pendharkar, F Brewer, ... IEEE Transactions on Electron Devices 58 (2), 318-326, 2011 | 7 | 2011 |
| Robust high current ESD performance of nano-meter scale DeNMOS by source ballasting A Chatterjee, F Brewer, H Gossner, S Pendharkar, C Duvvury 2010 IEEE International Reliability Physics Symposium, 853-856, 2010 | 7 | 2010 |
| Modeling erratic behavior due to high current filamentation in bipolar structures under dynamic avalanche conditions DK Sinha, A Chatterjee, RD Schrimpf IEEE Transactions on Electron Devices 63 (8), 3185-3192, 2016 | 6 | 2016 |
