|In-situ sensing, process monitoring and machine control in Laser Powder Bed Fusion: A review|
R McCann, MA Obeidi, C Hughes, É McCarthy, DS Egan, ...
Additive Manufacturing 45, 102058, 2021
|Mechanism of stress relaxation and phase transformation in additively manufactured Ti-6Al-4V via in situ high temperature XRD and TEM analyses|
FR Kaschel, RK Vijayaraghavan, A Shmeliov, EK McCarthy, M Canavan, ...
Acta Materialia 188, 720-732, 2020
|Citrate-capped gold nanoparticle electrophoretic heat production in response to a time-varying radio-frequency electric field|
SJ Corr, M Raoof, Y Mackeyev, S Phounsavath, MA Cheney, BT Cisneros, ...
The Journal of Physical Chemistry C 116 (45), 24380-24389, 2012
|Characterization of the carrot defect in 4H-SiC epitaxial layers|
J Hassan, A Henry, PJ McNally, JP Bergman
Journal of Crystal Growth 312 (11), 1828-1837, 2010
|Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon|
L O’Reilly, OF Lucas, PJ McNally, A Reader, G Natarajan, S Daniels, ...
Journal of applied physics 98 (11), 2005
|Low temperature growth GaAs on Ge|
L Knuuttila, A Lankinen, J Likonen, H Lipsanen, X Lu, P McNally, ...
Japanese journal of applied physics 44 (11R), 7777, 2005
|Crack propagation and fracture in silicon wafers under thermal stress|
A Danilewsky, J Wittge, K Kiefl, D Allen, P McNally, J Garagorri, ...
Journal of applied crystallography 46 (4), 849-855, 2013
|Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging|
AN Danilewsky, J Wittge, A Croell, D Allen, P McNally, P Vagovič, ...
Journal of crystal growth 318 (1), 1157-1163, 2011
|Growth and characterisation of wide-bandgap, I-VII optoelectronic materials on silicon|
L O’Reilly, G Natarajan, PJ McNally, D Cameron, OF Lucas, ...
Journal of Materials Science: Materials in Electronics 16, 415-419, 2005
|Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs|
JC Ramirez, PJ McNally, LS Cooper, JJ Rosenberg, LB Freund, ...
IEEE transactions on electron devices 35 (8), 1232-1240, 1988
|Enhanced activation of Zn‐implanted GaAs|
DE Davies, PJ McNally
Applied physics letters 44 (3), 304-306, 1984
|Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications|
G Natarajan, S Daniels, DC Cameron, L O’Reilly, A Mitra, PJ McNally, ...
Journal of Applied Physics 100 (3), 2006
|Evaluation via powder metallurgy of nano-reinforced iron powders developed for selective laser melting applications|
A Mussatto, R Groarke, A Ahmed, IUI Ahad, RK Vijayaraghavan, A O'Neill, ...
Materials & Design 182, 108046, 2019
|Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell|
KV Rajani, S Daniels, M Rahman, A Cowley, PJ McNally
Materials Letters 111, 63-66, 2013
|Determination of crystal misorientation in epitaxial lateral overgrowth of GaN|
WM Chen, PJ McNally, K Jacobs, T Tuomi, AN Danilewsky, ZR Zytkiewicz, ...
Journal of crystal growth 243 (1), 94-102, 2002
|Evaluation and comparison of hydroxyapatite coatings deposited using both thermal and non-thermal techniques|
JN Barry, B Twomey, A Cowley, L O'Neill, PJ McNally, DP Dowling
Surface and Coatings Technology 226, 82-91, 2013
|Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping|
L O’Reilly, A Mitra, G Natarajan, OF Lucas, PJ McNally, S Daniels, ...
Journal of crystal growth 287 (1), 139-144, 2006
|Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers|
R Rantamäki, T Tuomi, ZR Zytkiewicz, J Domagala, PJ McNally, ...
Journal of applied physics 86 (8), 4298-4303, 1999
|Thermal slip sources at the extremity and bevel edge of silicon wafers|
BK Tanner, J Wittge, D Allen, MC Fossati, AN Danilwesky, P McNally, ...
Journal of Applied Crystallography 44 (3), 489-494, 2011
|Use of plasma impedance monitoring for determination of sf6 reactive ion etching end point of the sio2/si system|
MNA Dewan, PJ McNally, T Perova, PAF Herbert
Microelectron. Eng 65 (1-2), 25-46, 2003