| In-situ sensing, process monitoring and machine control in Laser Powder Bed Fusion: A review R McCann, MA Obeidi, C Hughes, É McCarthy, DS Egan, ... Additive Manufacturing 45, 102058, 2021 | 148 | 2021 |
| Mechanism of stress relaxation and phase transformation in additively manufactured Ti-6Al-4V via in situ high temperature XRD and TEM analyses FR Kaschel, RK Vijayaraghavan, A Shmeliov, EK McCarthy, M Canavan, ... Acta Materialia 188, 720-732, 2020 | 110 | 2020 |
| Citrate-capped gold nanoparticle electrophoretic heat production in response to a time-varying radio-frequency electric field SJ Corr, M Raoof, Y Mackeyev, S Phounsavath, MA Cheney, BT Cisneros, ... The Journal of Physical Chemistry C 116 (45), 24380-24389, 2012 | 77 | 2012 |
| Characterization of the carrot defect in 4H-SiC epitaxial layers J Hassan, A Henry, PJ McNally, JP Bergman Journal of Crystal Growth 312 (11), 1828-1837, 2010 | 52 | 2010 |
| Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon L O’Reilly, OF Lucas, PJ McNally, A Reader, G Natarajan, S Daniels, ... Journal of applied physics 98 (11), 2005 | 40 | 2005 |
| Low temperature growth GaAs on Ge L Knuuttila, A Lankinen, J Likonen, H Lipsanen, X Lu, P McNally, ... Japanese journal of applied physics 44 (11R), 7777, 2005 | 39 | 2005 |
| Crack propagation and fracture in silicon wafers under thermal stress A Danilewsky, J Wittge, K Kiefl, D Allen, P McNally, J Garagorri, ... Journal of applied crystallography 46 (4), 849-855, 2013 | 37 | 2013 |
| Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging AN Danilewsky, J Wittge, A Croell, D Allen, P McNally, P Vagovič, ... Journal of crystal growth 318 (1), 1157-1163, 2011 | 35 | 2011 |
| Growth and characterisation of wide-bandgap, I-VII optoelectronic materials on silicon L O’Reilly, G Natarajan, PJ McNally, D Cameron, OF Lucas, ... Journal of Materials Science: Materials in Electronics 16, 415-419, 2005 | 35 | 2005 |
| Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs JC Ramirez, PJ McNally, LS Cooper, JJ Rosenberg, LB Freund, ... IEEE transactions on electron devices 35 (8), 1232-1240, 1988 | 33 | 1988 |
| Enhanced activation of Zn‐implanted GaAs DE Davies, PJ McNally Applied physics letters 44 (3), 304-306, 1984 | 33 | 1984 |
| Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications G Natarajan, S Daniels, DC Cameron, L O’Reilly, A Mitra, PJ McNally, ... Journal of Applied Physics 100 (3), 2006 | 32 | 2006 |
| Evaluation via powder metallurgy of nano-reinforced iron powders developed for selective laser melting applications A Mussatto, R Groarke, A Ahmed, IUI Ahad, RK Vijayaraghavan, A O'Neill, ... Materials & Design 182, 108046, 2019 | 31 | 2019 |
| Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell KV Rajani, S Daniels, M Rahman, A Cowley, PJ McNally Materials Letters 111, 63-66, 2013 | 28 | 2013 |
| Determination of crystal misorientation in epitaxial lateral overgrowth of GaN WM Chen, PJ McNally, K Jacobs, T Tuomi, AN Danilewsky, ZR Zytkiewicz, ... Journal of crystal growth 243 (1), 94-102, 2002 | 27 | 2002 |
| Evaluation and comparison of hydroxyapatite coatings deposited using both thermal and non-thermal techniques JN Barry, B Twomey, A Cowley, L O'Neill, PJ McNally, DP Dowling Surface and Coatings Technology 226, 82-91, 2013 | 26 | 2013 |
| Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping L O’Reilly, A Mitra, G Natarajan, OF Lucas, PJ McNally, S Daniels, ... Journal of crystal growth 287 (1), 139-144, 2006 | 26 | 2006 |
| Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers R Rantamäki, T Tuomi, ZR Zytkiewicz, J Domagala, PJ McNally, ... Journal of applied physics 86 (8), 4298-4303, 1999 | 25 | 1999 |
| Thermal slip sources at the extremity and bevel edge of silicon wafers BK Tanner, J Wittge, D Allen, MC Fossati, AN Danilwesky, P McNally, ... Journal of Applied Crystallography 44 (3), 489-494, 2011 | 24 | 2011 |
| Use of plasma impedance monitoring for determination of sf6 reactive ion etching end point of the sio2/si system MNA Dewan, PJ McNally, T Perova, PAF Herbert Microelectron. Eng 65 (1-2), 25-46, 2003 | 24* | 2003 |
