| Impact of Cu electrode on switching behavior in a Cu/HfO2/Pt structure and resultant Cu ion diffusion M Haemori, T Nagata, T Chikyow Applied Physics Express 2 (6), 061401, 2009 | 138 | 2009 |
| Effect of UV–ozone treatment on electrical properties of PEDOT: PSS film T Nagata, S Oh, T Chikyow, Y Wakayama Organic Electronics 12 (2), 279-284, 2011 | 98 | 2011 |
| Depletion of the In2O3 (001) and (111) surface electron accumulation by an oxygen plasma surface treatment O Bierwagen, JS Speck, T Nagata, T Chikyow, Y Yamashita, H Yoshikawa, ... Applied Physics Letters 98 (17), 2011 | 89 | 2011 |
| Electro-optic property of ZnO: X (X= Li, Mg) thin films T Nagata, T Shimura, A Ashida, N Fujimura, T Ito Journal of crystal growth 237, 533-537, 2002 | 80 | 2002 |
| Ferroelectricity of HfxZr1− xO2 thin films fabricated by 300 C low temperature process with plasma-enhanced atomic layer deposition T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura Microelectronic Engineering 215, 111013, 2019 | 77 | 2019 |
| Oxygen migration at Pt/HfO2/Pt interface under bias operation T Nagata, M Haemori, Y Yamashita, H Yoshikawa, Y Iwashita, ... Applied Physics Letters 97 (8), 2010 | 74 | 2010 |
| Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure T Nagata, M Haemori, Y Yamashita, H Yoshikawa, Y Iwashita, ... Applied Physics Letters 99 (22), 2011 | 71 | 2011 |
| Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films T Nagata, O Bierwagen, ME White, MY Tsai, JS Speck Journal of Applied Physics 107 (3), 2010 | 66 | 2010 |
| Highly uniform epitaxial ZnO nanorod arrays for nanopiezotronics J Volk, T Nagata, R Erdélyi, I Bársony, AL Tóth, IE Lukács, Z Czigány, ... Nanoscale research letters 4, 699-704, 2009 | 66 | 2009 |
| Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories K Kamiya, MY Yang, T Nagata, SG Park, B Magyari-Koepe, T Chikyow, ... Physical Review B—Condensed Matter and Materials Physics 87 (15), 155201, 2013 | 65 | 2013 |
| Improvement in ferroelectricity of HfxZr1− xO2 thin films using top-and bottom-ZrO2 nucleation layers T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura APL Materials 7 (6), 2019 | 63 | 2019 |
| Surface structure and chemical states of a-plane and c-plane InN films T Nagata, G Koblmüller, O Bierwagen, CS Gallinat, JS Speck Applied Physics Letters 95 (13), 2009 | 63 | 2009 |
| Investigations into the impact of the template layer on ZnO nanowire arrays made using low temperature wet chemical growth R Erdelyi, T Nagata, DJ Rogers, FH Teherani, ZE Horváth, Z Lábadi, ... Crystal growth & design 11 (6), 2515-2519, 2011 | 56 | 2011 |
| Test head for IC tester T Nagata US Patent 5,936,417, 1999 | 56 | 1999 |
| Test probe for semiconductor devices, method of manufacturing of the same, and member for removing foreign matter S Maekawa, M Takemoto, K Miki, M Kano, T Nagata, Y Kashiba US Patent 6,646,455, 2003 | 55 | 2003 |
| XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films T Nagata, O Bierwagen, ME White, MY Tsai, Y Yamashita, H Yoshikawa, ... Applied Physics Letters 98 (23), 2011 | 48 | 2011 |
| Ferroelectricity in Li-doped ZnO: X thin films and their application in optical switching devices T Nagata, T Shimura, Y Nakano, A Ashida, N Fujimura, T Ito Japanese Journal of Applied Physics 40 (9S), 5615, 2001 | 45 | 2001 |
| Development of AlN/diamond heterojunction field effect transistors M Imura, R Hayakawa, H Ohsato, E Watanabe, D Tsuya, T Nagata, M Liao, ... Diamond and related materials 24, 206-209, 2012 | 42 | 2012 |
| XPS and UPS study on band alignment at Pt–Zn-terminated ZnO (0 0 0 1) interface P Blumentrit, M Yoshitake, S Nemšák, T Kim, T Nagata Applied surface science 258 (2), 780-785, 2011 | 39 | 2011 |
| Non-alloyed Schottky and ohmic contacts to as-grown and oxygen-plasma treated n-type SnO2 (110) and (101) thin films O Bierwagen, ME White, MY Tsai, T Nagata, JS Speck Applied physics express 2 (10), 106502, 2009 | 38 | 2009 |
