Marilena Vivona

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Fabrizio RoccaforteConsiglio Nazionale delle Ricerche - Istituto per la Microelettronica e MicrosistemiVerifisert e-postadresse på imm.cnr.it
Filippo GiannazzoCNR, Istituto per la Microelettronica e i Microsistemi, Catania, ItalyVerifisert e-postadresse på imm.cnr.it
Patrick FiorenzaConsiglio Nazionale delle Ricerche - Insituto per la Microelettronica e Microsistemi, Catania ItaliaVerifisert e-postadresse på imm.cnr.it
Giuseppe GrecoCNR - IMMVerifisert e-postadresse på imm.cnr.it
Sylvain GIRARDProfessor, Université de Saint-Etienne, Laboratoire Hubert Curien, IUF, FranceVerifisert e-postadresse på univ-st-etienne.fr
thierry RobinCTO, iXFiber, LannionVerifisert e-postadresse på ixfiber.com
BoukenterUniversité de St-EtienneVerifisert e-postadresse på univ-st-etienne.fr
Youcef OuerdaneProfessor, Université de Lyon, Université de Saint-EtienneVerifisert e-postadresse på univ-st-etienne.fr
Mario SaggioSTmicroelectronicsVerifisert e-postadresse på st.com
Corrado BongiornoIstituto per la Microelettronica ed i MicrosistemiVerifisert e-postadresse på imm.cnr.it
Marco CannasUniversity of Palermo, Department of Physics and ChemistryVerifisert e-postadresse på unipa.it
Raffaella Lo NigroConsiglio Nazionale delle Ricerche-Istituto per la Microelettronica e MicrosistemiVerifisert e-postadresse på imm.cnr.it
salvatore di francoCNR IMMVerifisert e-postadresse på imm.cnr.it
Antonino La MagnaCNR IMMVerifisert e-postadresse på imm.cnr.it
Ferdinando IucolanoSTMicroelectronicsVerifisert e-postadresse på st.com
Gabriele BellocchiST MicroelectronicsVerifisert e-postadresse på st.com
Andrea SeverinoWide bandgap compound semiconductor epitaxy, R&D dept, STMicroelectronicsVerifisert e-postadresse på st.com
Roberto BoscainoUniversity of Palermo, ItalyVerifisert e-postadresse på unipa.it
Luciano MesciaPolitecnico di Bari-DEI DepartmentVerifisert e-postadresse på deemail.poliba.it
Francesco PrudenzanoPolitecnico di BariVerifisert e-postadresse på poliba.it

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Marilena Vivona

Staff Member, Institute for Microelectronics and Microsystems (IMM), CNR, Italy

Verifisert e-postadresse på imm.cnr.it

Contacts to 4H-SiC SiO2-4H-SiC Interface Fiber Lasers and Amplifiers Optical Spectroscopy Radiation Effects on silicate Glas


Tittel Sorter etter sitater Sorter etter år Sorter etter tittel	Sitert av Sitert av	År
Recent advances on dielectrics technology for SiC and GaN power devices F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ... Applied Surface Science 301, 9-18, 2014	173	2014
Radiation hardening techniques for Er/Yb doped optical fibers and amplifiers for space application S Girard, M Vivona, A Laurent, B Cadier, C Marcandella, T Robin, ... Optics express 20 (8), 8457-8465, 2012	123	2012
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte Applied Physics Letters 103 (15), 2013	94	2013
Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC M Vivona, G Greco, F Giannazzo, RL Nigro, S Rascunà, M Saggio, ... Semiconductor Science and Technology 29 (7), 075018, 2014	59	2014
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N₂O and POCl₃ P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, ... Applied Physics A 115, 333-339, 2014	47	2014
Design of radiation-hardened rare-earth doped amplifiers through a coupled experiment/simulation approach S Girard, L Mescia, M Vivona, A Laurent, Y Ouerdane, C Marcandella, ... Journal of Lightwave Technology 31 (8), 1247-1254, 2013	43	2013
Selective doping in silicon carbide power devices F Roccaforte, P Fiorenza, M Vivona, G Greco, F Giannazzo Materials 14 (14), 3923, 2021	40	2021
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC M Vivona, G Greco, C Bongiorno, RL Nigro, S Scalese, F Roccaforte Applied Surface Science 420, 331-335, 2017	37	2017
Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements P Fiorenza, A La Magna, M Vivona, F Roccaforte Applied Physics Letters 109 (1), 2016	35	2016
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC M Vivona, G Greco, R Lo Nigro, C Bongiorno, F Roccaforte Journal of Applied Physics 118 (3), 2015	33	2015
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors P Fiorenza, M Vivona, F Iucolano, A Severino, S Lorenti, G Nicotra, ... Materials Science in Semiconductor Processing 78, 38-42, 2018	31	2018
Influence of Ce codoping and H2 pre-loading on Er/Yb-doped fiber: Radiation response characterized by Confocal Micro-Luminescence M Vivona, S Girard, C Marcandella, T Robin, B Cadier, M Cannas, ... Journal of Non-Crystalline Solids, 2010	22	2010
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, ... physica status solidi (a) 214 (4), 1600357, 2017	20	2017
Influence of Codoping on the Photoluminescence Excitation Channels of Phosphosilicate Yb/Er-Doped Glasses M Vivona, S Girard, T Robin, B Cadier, L Vaccaro, M Cannas, ... IEEE Photonics Technology Letters 24 (6), 509-511, 2012	19	2012
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC M Vivona, G Greco, G Bellocchi, L Zumbo, S Di Franco, M Saggio, ... Journal of Physics D: Applied Physics 54 (5), 055101, 2020	18	2020
Metal/semiconductor contacts to silicon carbide: Physics and technology F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Rascunà, ... Materials Science Forum 924, 339-344, 2018	16	2018
Characterization of SiO₂/SiC Interfaces Annealed in N₂O or POCl₃ P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, S Lorenti, ... Materials Science Forum 778, 623-626, 2014	16	2014
Barrier height tuning in Ti/4H-SiC Schottky diodes G Bellocchi, M Vivona, C Bongiorno, P Badalà, A Bassi, S Rascuna, ... Solid-State Electronics 186, 108042, 2021	14	2021
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC M Vivona, G ,Greco, M Spera, P Fiorenza, F Giannazzo, A La Magna, ... Journal of Physics D: Applied Physics 54 (44), 445107, 2021	14	2021
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering P Fiorenza, M Vivona, S Di Franco, E Smecca, S Sanzaro, A Alberti, ... Materials Science in Semiconductor Processing 93, 290-294, 2019	12	2019

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