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Lionel Trojman
Lionel Trojman
Institut Supérieur d'Electronique de Paris - Isep
Verified email at isep.fr
Title
Cited by
Cited by
Year
Introducing 5-nm FinFET technology in Microwind
E Sicard, L Trojman
732021
Breast cancer, screening and diagnostic tools: All you need to know
D Barba, A León-Sosa, P Lugo, D Suquillo, F Torres, F Surre, L Trojman, ...
Critical reviews in oncology/hematology 157, 103174, 2021
722021
Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
LM Procel, L Trojman, J Moreno, F Crupi, V Maccaronio, R Degraeve, ...
Journal of Applied Physics 114 (7), 2013
652013
Origins and implications of increased channel hot carrier variability in nFinFETs
B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ...
2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015
382015
Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination
E Acurio, F Crupi, N Ronchi, B De Jaeger, B Bakeroot, S Decoutere, ...
IEEE Transactions on Electron Devices 65 (5), 1765-1770, 2018
352018
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
E Acurio, F Crupi, P Magnone, L Trojman, G Meneghesso, F Iucolano
Solid-State Electronics 132, 49-56, 2017
332017
RF split capacitance–voltage measurements of short-channel and leaky MOSFET devices
E San Andres, L Pantisano, J Ramos, S Severi, L Trojman, S De Gendt, ...
IEEE electron device letters 27 (9), 772-774, 2006
322006
Electrical characteristics of 8-/spl Aring/EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
LA Ragnarsson, S Severi, L Trojman, KD Johnson, DP Brunco, ...
IEEE transactions on electron devices 53 (7), 1657-1668, 2006
32*2006
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework
E Garzon, R De Rose, F Crupi, L Trojman, M Lanuzza
Microelectronic Engineering 215, 111009, 2019
302019
Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs
LM Procel, F Crupi, J Franco, L Trojman, B Kaczer
IEEE Electron Device Letters 35 (12), 1167-1169, 2014
252014
High performing 8 A EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions
LA Ragnarsson, S Severi, L Trojmanm, DP Brunco, KD Johnson, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 234-235, 2005
25*2005
Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
E Acurio, F Crupi, P Magnone, L Trojman, F Iucolano
Microelectronic Engineering 178, 42-47, 2017
242017
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
E Garzon, R De Rose, F Crupi, L Trojman, G Finocchio, M Carpentieri, ...
Integration 71, 56-69, 2020
232020
On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics
LÅ Ragnarsson, J Mitard, T Kauerauf, A De Keersgieter, T Schram, ...
Proceedings of 2011 International Symposium on VLSI Technology, Systems and …, 2011
192011
Mobility and dielectric quality of 1-nm EOT HfSiON on Si (110) and (100)
L Trojman, L Pantisano, I Ferain, S Severi, HE Maes, G Groeseneken
IEEE transactions on electron devices 55 (12), 3414-3420, 2008
192008
Reconfigurable CMOS/STT-MTJ non-volatile circuit for logic-in-memory applications
E Garzón, B Zambrano, T Moposita, R Taco, LM Prócel, L Trojman
2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), 1-4, 2020
172020
DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
V Maccaronio, F Crupi, LM Procel, L Goux, E Simoen, L Trojman, ...
Microelectronic engineering 107, 1-5, 2013
172013
Novel, effective and cost-efficient method of introducing fluorine into metal/Hf-based gate stack in MuGFET and planar SOI devices with significant BTI improvement
A Shickova, N Collaert, P Zimmerman, M Demand, E Simoen, G Pourtois, ...
2007 IEEE Symposium on VLSI Technology, 112-113, 2007
172007
Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge
L Pantisano, L Trojman, J Mitard, B DeJaeger, S Severi, G Eneman, ...
2008 Symposium on VLSI Technology, 52-53, 2008
162008
Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs
J Franco, B Kaczer, S Mukhopadhyay, P Duhan, P Weckx, PJ Roussel, ...
2016 IEEE International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2016
142016
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