Recent developments in hydrodynamical modeling of semiconductors (2003) 1: 54 in Mathematical Problems in Semiconductor Physics AM Anile, G Mascali, V Romano Lecture Notes in Mathematics, 2003 | 57* | 2003 |

Charge transport in graphene including thermal effects G Mascali, V Romano SIAM Journal on Applied Mathematics 77 (2), 593-613, 2017 | 43 | 2017 |

Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle VD Camiola, G Mascali, V Romano Continuum Mechanics and Thermodynamics 24, 417-436, 2012 | 43 | 2012 |

A hydrodynamic model for silicon semiconductors including crystal heating G Mascali European Journal of Applied Mathematics 26 (4), 477-496, 2015 | 41 | 2015 |

Exact maximum entropy closure of the hydrodynamical model for Si semiconductors: The 8-moment case S La Rosa, G Mascali, V Romano SIAM Journal on Applied Mathematics 70 (3), 710-734, 2009 | 38 | 2009 |

Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle G Mascali, V Romano Continuum Mechanics and Thermodynamics 14, 405-423, 2002 | 37 | 2002 |

A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle G Mascali, V Romano Mathematical and Computer Modelling 55 (3-4), 1003-1020, 2012 | 36 | 2012 |

Exploitation of the maximum entropy principle in mathematical modeling of charge transport in semiconductors G Mascali, V Romano Entropy 19 (1), 36, 2017 | 34 | 2017 |

A hydrodynamic model for covalent semiconductors with applications to GaN and SiC G Alì, G Mascali, V Romano, RC Torcasio Acta applicandae mathematicae 122, 335-348, 2012 | 34 | 2012 |

Monte Carlo analysis of thermal effects in monolayer graphene M Coco, G Mascali, V Romano Journal of Computational and Theoretical Transport 45 (7), 540-553, 2016 | 32 | 2016 |

Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle VD Camiola, G Mascali, V Romano Mathematical and Computer Modelling 58 (1-2), 321-343, 2013 | 31 | 2013 |

Charge transport and mobility in monolayer graphene A Majorana, G Mascali, V Romano Journal of Mathematics in Industry 7, 1-13, 2016 | 27 | 2016 |

Hydrodynamic subband model for semiconductors based on the maximum entropy principle G Mascali, V Romano Il Nuovo cimento della Società italiana di fisica. C 33 (1), 155, 2010 | 26 | 2010 |

Si and GaAs mobility derived from a hydrodynamical model for semiconductors based on the maximum entropy principle G Mascali, V Romano Physica A: Statistical Mechanics and its Applications 352 (2-4), 459-476, 2005 | 26 | 2005 |

A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands G Mascali, V Romano Mathematical and computer modelling 53 (1-2), 213-229, 2011 | 25 | 2011 |

A new formula for thermal conductivity based on a hierarchy of hydrodynamical models G Mascali Journal of Statistical Physics 163, 1268-1284, 2016 | 23 | 2016 |

Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle G Mascali, V Romano COMPEL-The international journal for computation and mathematics in …, 2005 | 20 | 2005 |

Charge transport in low dimensional semiconductor structures VD Camiola, G Mascali, V Romano Mathematics in Industry 31, 2020 | 19 | 2020 |

MEP parabolic hydrodynamical model for holes in silicon semiconductors G Mascali, V Romano, JM Sellier Nuovo Cimento B Serie 120 (2), 197, 2005 | 19 | 2005 |

Maximum entropy principle in relativistic radiation hydrodynamics G Mascali, V Romano Annales de l'IHP Physique théorique 67 (2), 123-144, 1997 | 19 | 1997 |