| Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors Y Park, HW Baac, J Heo, G Yoo Applied Physics Letters 108 (8), 2016 | 161 | 2016 |
| Direct synthesis of thickness-tunable MoS2 quantum dot thin layers: Optical, structural and electrical properties and their application to hydrogen evolution D Vikraman, K Akbar, S Hussain, G Yoo, JY Jang, SH Chun, J Jung, ... Nano Energy 35, 101-114, 2017 | 115 | 2017 |
| Label-Free and Recalibrated Multilayer MoS2 Biosensor for Point-of-Care Diagnostics H Park, G Han, SW Lee, H Lee, SH Jeong, M Naqi, AA AlMutairi, YJ Kim, ... ACS applied materials & interfaces 9 (50), 43490-43497, 2017 | 81 | 2017 |
| Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure A Hwang, M Park, Y Park, Y Shim, S Youn, CH Lee, HB Jeong, HY Jeong, ... Science Advances 7 (51), eabj2521, 2021 | 76 | 2021 |
| Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor J Ahn, J Ma, D Lee, Q Lin, Y Park, O Lee, S Sim, K Lee, G Yoo, J Heo ACS Photonics 8 (2), 557-566, 2021 | 69 | 2021 |
| Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors CH Lee, Y Park, S Youn, MJ Yeom, HS Kum, J Chang, J Heo, G Yoo Advanced Functional Materials 32 (4), 2107992, 2022 | 55 | 2022 |
| Real-time electrical detection of epidermal skin MoS2 biosensor for point-of-care diagnostics G Yoo, H Park, M Kim, WG Song, S Jeong, MH Kim, H Lee, SW Lee, ... Nano Research 10, 767-775, 2017 | 54 | 2017 |
| Variable-color light-emitting diodes using GaN microdonut arrays. Y Tchoe, J Jo, M Kim, J Heo, G Yoo, C Sone, GC Yi Advanced Materials (Deerfield Beach, Fla.) 26 (19), 3019-3023, 2014 | 45 | 2014 |
| Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate J Oh, J Ma, G Yoo Results in Physics 13, 102151, 2019 | 41 | 2019 |
| Asymmetric Double‐Gate β‐Ga2O3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices J Ma, HJ Cho, J Heo, S Kim, G Yoo Advanced Electronic Materials 5 (6), 1800938, 2019 | 39 | 2019 |
| Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes G Yoo, S Lee, B Yoo, C Han, S Kim, MS Oh IEEE Electron Device Letters 36 (11), 1215-1218, 2015 | 38 | 2015 |
| Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters G Yoo, SL Choi, SJ Park, KT Lee, S Lee, MS Oh, J Heo, HJ Park Scientific Reports 7 (1), 40945, 2017 | 35 | 2017 |
| Low Subthreshold Swing Double-Gate -Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics J Ma, G Yoo IEEE Electron Device Letters 40 (8), 1317-1320, 2019 | 33 | 2019 |
| Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors S Kim, H Park, S Choo, S Baek, Y Kwon, N Liu, JY Yang, CW Yang, G Yoo, ... Communications Materials 1 (1), 86, 2020 | 30 | 2020 |
| Asymmetric electrical properties of fork a-Si: H thin-film transistor and its application to flat panel displays H Lee, G Yoo, JS Yoo, J Kanicki Journal of Applied Physics 105 (12), 2009 | 26 | 2009 |
| A maskless laser-write lithography processing of thin-film transistors on a hemispherical surface G Yoo, H Lee, D Radtke, M Stumpf, U Zeitner, J Kanicki Microelectronic engineering 87 (1), 83-87, 2010 | 25 | 2010 |
| High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics YK Hong, G Yoo, J Kwon, S Hong, WG Song, N Liu, I Omkaram, B Yoo, ... AIP Advances 6 (5), 2016 | 24 | 2016 |
| All polymer encapsulated, highly-sensitive MoS2 phototransistors on flexible PAR substrate J Ma, KY Choi, SH Kim, H Lee, G Yoo Applied Physics Letters 113 (1), 2018 | 22 | 2018 |
| Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFETs YJ Jeong, JY Yang, CH Lee, R Park, G Lee, RBK Chung, G Yoo Applied Surface Science 558, 149936, 2021 | 21 | 2021 |
| Pt-decorated graphene gate AlGaN/GaN MIS-HEMT for ultrahigh sensitive hydrogen gas detection J Ahn, D Kim, KH Park, G Yoo, J Heo IEEE Transactions on Electron Devices 68 (3), 1255-1261, 2021 | 21 | 2021 |
