| High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ... Applied physics letters 75 (14), 2073-2075, 1999 | 296 | 1999 |
| Luminescence of as-grown and thermally annealed GaAsN/GaAs S Francoeur, G Sivaraman, Y Qiu, S Nikishin, H Temkin Applied physics letters 72 (15), 1857-1859, 1998 | 190 | 1998 |
| High quality GaN–InGaN heterostructures grown on (111) silicon substrates JW Yang, CJ Sun, Q Chen, MZ Anwar, M Asif Khan, SA Nikishin, ... Applied physics letters 69 (23), 3566-3568, 1996 | 141 | 1996 |
| Raman studies of nitrogen incorporation in T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu, S Nikishin, H Temkin Applied physics letters 73 (10), 1409-1411, 1998 | 132 | 1998 |
| Si-doped AlxGa1− xN (0.56⩽×⩽ 1) layers grown by molecular beam epitaxy with ammonia B Borisov, V Kuryatkov, Y Kudryavtsev, R Asomoza, S Nikishin, DY Song, ... Applied physics letters 87 (13), 2005 | 116 | 2005 |
| gate dielectric with 0.5 nm equivalent oxide thickness H Harris, K Choi, N Mehta, A Chandolu, N Biswas, G Kipshidze, ... Applied physics letters 81 (6), 1065-1067, 2002 | 116 | 2002 |
| Vibrational properties of AlN grown on (111)-oriented silicon T Prokofyeva, M Seon, J Vanbuskirk, M Holtz, SA Nikishin, NN Faleev, ... Physical Review B 63 (12), 125313, 2001 | 114 | 2001 |
| AlN/AlGaInN superlattice light-emitting diodes at 280 nm G Kipshidze, V Kuryatkov, K Zhu, B Borisov, M Holtz, S Nikishin, H Temkin Journal of applied physics 93 (3), 1363-1366, 2003 | 109 | 2003 |
| AlGaInN-based ultraviolet light-emitting diodes grown on Si (111) G Kipshidze, V Kuryatkov, B Borisov, M Holtz, S Nikishin, H Temkin Applied Physics Letters 80 (20), 3682-3684, 2002 | 109 | 2002 |
| Excitons bound to nitrogen clusters in GaAsN S Francoeur, SA Nikishin, C Jin, Y Qiu, H Temkin Applied physics letters 75 (11), 1538-1540, 1999 | 108 | 1999 |
| Ordering effects in Raman spectra of coherently strained GaAs 1− x N x AM Mintairov, PA Blagnov, VG Melehin, NN Faleev, JL Merz, Y Qiu, ... Physical Review B 56 (24), 15836, 1997 | 102 | 1997 |
| High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ... Applied physics letters 75 (4), 484-486, 1999 | 99 | 1999 |
| Method of epitaxial growth of high quality nitride layers on silicon substrates H Temkin, SA Nikishin US Patent 6,391,748, 2002 | 97 | 2002 |
| Selective growth of high quality GaN on Si (111) substrates M Seon, T Prokofyeva, M Holtz, SA Nikishin, NN Faleev, H Temkin Applied physics letters 76 (14), 1842-1844, 2000 | 96 | 2000 |
| Composition dependence of the optical phonon energies in hexagonal M Holtz, T Prokofyeva, M Seon, K Copeland, J Vanbuskirk, S Williams, ... Journal of applied Physics 89 (12), 7977-7982, 2001 | 83 | 2001 |
| The anodization voltage influence on the properties of TiO2 nanotubes grown by electrochemical oxidation Y Alivov, M Pandikunta, S Nikishin, ZY Fan Nanotechnology 20 (22), 225602, 2009 | 82 | 2009 |
| Mg and O codoping in p-type GaN and G Kipshidze, V Kuryatkov, B Borisov, Y Kudryavtsev, R Asomoza, ... Applied physics letters 80 (16), 2910-2912, 2002 | 73 | 2002 |
| Growth of single phase GaAs1− xNx with high nitrogen concentration by metal–organic molecular beam epitaxy Y Qiu, SA Nikishin, H Temkin, NN Faleev, YA Kudriavtsev Applied physics letters 70 (24), 3242-3244, 1997 | 72 | 1997 |
| Evolution of surface roughness of AlN and GaN induced by inductively coupled plasma etching K Zhu, V Kuryatkov, B Borisov, J Yun, G Kipshidze, SA Nikishin, H Temkin, ... Journal of applied physics 95 (9), 4635-4641, 2004 | 71 | 2004 |
| Thermodynamic considerations in epitaxial growth of solid solutions Y Qiu, SA Nikishin, H Temkin, VA Elyukhin, YA Kudriavtsev Applied physics letters 70 (21), 2831-2833, 1997 | 70 | 1997 |
