PC1Dmod 6.2–Improved simulation of c-Si devices with updates on device physics and user interface H Haug, J Greulich
Energy Procedia 92, 60-68, 2016
66 2016 Implementation of Fermi–Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells H Haug, A Kimmerle, J Greulich, A Wolf, ES Marstein
Solar energy materials and solar cells 131, 30-36, 2014
46 2014 Precise parameterization of the recombination velocity at passivated phosphorus doped surfaces A Kimmerle, M Rahman, S Werner, S Mack, A Wolf, A Richter, H Haug
Journal of Applied Physics 119 (2), 2016
44 2016 Surface Passivation Properties of X Cheng, P Repo, H Halvard, AP Perros, ES Marstein, M Di Sabatino, ...
IEEE journal of photovoltaics 7 (2), 479-485, 2017
39 2017 Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation TU Nærland, H Haug, H Angelskår, R Søndenå, ES Marstein, L Arnberg
IEEE Journal of Photovoltaics 3 (4), 1265-1270, 2013
38 2013 PC1Dmod 6.1–state-of-the-art models in a well-known interface for improved simulation of Si solar cells H Haug, J Greulich, A Kimmerle, ES Marstein
Solar Energy Materials and Solar Cells 142, 47-53, 2015
34 2015 A graphical user interface for multivariable analysis of silicon solar cells using scripted PC1D simulations H Haug, BR Olaisen, Ø Nordseth, ES Marstein
Energy Procedia 38, 72-79, 2013
31 2013 Endogenous soiling rate determination and detection of cleaning events in utility-scale PV plants Å Skomedal, H Haug, ES Marstein
IEEE Journal of Photovoltaics 9 (3), 858-863, 2019
30 2019 Impurity control in high performance multicrystalline silicon G Stokkan, DS Marisa, R Søndenå, M Juel, A Autruffe, K Adamczyk, ...
physica status solidi (a) 214 (7), 1700319, 2017
29 2017 SiOyNx/SiNx stack anti-reflection coating with PID-resistance for crystalline silicon solar cells C Zhou, J Zhu, SE Foss, H Haug, Ø Nordseth, ES Marstein, W Wang
Energy Procedia 77, 434-439, 2015
28 2015 Optical analysis of a ZnO/Cu2O subcell in a silicon-based tandem heterojunction solar cell Ø Nordseth, R Kumar, K Bergum, L Fara, SE Foss, H Haug, F Drăgan, ...
Green and Sustainable Chemistry 7 (1), 57-69, 2017
27 2017 Silicon surface passivation by PEDOT: PSS functionalized by SnO2 and TiO2 nanoparticles M García-Tecedor, SZ Karazhanov, GC Vasquez, H Haug, D Maestre, ...
Nanotechnology 29 (3), 035401, 2017
23 2017 Thermal stability of the OH–Li complex in hydrothermally grown single crystalline ZnO KM Johansen, H Haug, E Lund, EV Monakhov, BG Svensson
Applied Physics Letters 97 (21), 211907, 2010
23 2010 Temperature dependent photoluminescence imaging calibrated by photoconductance measurements H Haug, R Søndenå, MS Wiig, ES Marstein
Energy Procedia 124, 47-52, 2017
19 2017 How much power is lost in a hot-spot? A case study quantifying the effect of thermal anomalies in two utility scale PV power plants ÅF Skomedal, BL Aarseth, H Haug, J Selj, ES Marstein
Solar Energy 211, 1255-1262, 2020
18 2020 Modulating the field-effect passivation at the SiO2 /c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method H Haug, S Olibet, Ø Nordseth, E Stensrud Marstein
Journal of Applied Physics 114 (17), 174502, 2013
18 2013 On the recombination centers of iron-gallium pairs in Ga-doped silicon TU Nærland, S Bernardini, H Haug, S Grini, L Vines, N Stoddard, ...
Journal of Applied Physics 122 (8), 085703, 2017
17 2017 Photoluminescence imaging under applied bias for characterization of Si surface passivation layers H Haug, Ø Nordseth, EV Monakhov, ES Marstein
Solar energy materials and solar cells 106, 60-65, 2012
17 2012 Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process PM Weiser, E Monakhov, H Haug, MS Wiig, R Søndenå
Journal of Applied Physics 127 (6), 065703, 2020
16 2020 The effect of phosphorus diffusion gettering on recombination at grain boundaries in HPMC-Silicon wafers MS Wiig, K Adamczyk, H Haug, KE Ekstrøm, R Søndenå
Energy Procedia 92, 886-895, 2016
16 2016 