PC1Dmod 6.2–Improved simulation of c-Si devices with updates on device physics and user interface H Haug, J Greulich
Energy Procedia 92, 60-68, 2016
42 2016 Implementation of Fermi–Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells H Haug, A Kimmerle, J Greulich, A Wolf, ES Marstein
Solar energy materials and solar cells 131, 30-36, 2014
36 2014 PC1Dmod 6.1–state-of-the-art models in a well-known interface for improved simulation of Si solar cells H Haug, J Greulich, A Kimmerle, ES Marstein
Solar Energy Materials and Solar Cells 142, 47-53, 2015
32 2015 Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation TU Nærland, H Haug, H Angelskår, R Søndenå, ES Marstein, L Arnberg
IEEE Journal of Photovoltaics 3 (4), 1265-1270, 2013
29 2013 Precise parameterization of the recombination velocity at passivated phosphorus doped surfaces A Kimmerle, M Momtazur Rahman, S Werner, S Mack, A Wolf, A Richter, ...
Journal of Applied Physics 119 (2), 025706, 2016
25 2016 A graphical user interface for multivariable analysis of silicon solar cells using scripted PC1D simulations H Haug, BR Olaisen, Ø Nordseth, ES Marstein
Energy Procedia 38, 72-79, 2013
24 2013 Thermal stability of the OH–Li complex in hydrothermally grown single crystalline ZnO KM Johansen, H Haug, E Lund, EV Monakhov, BG Svensson
Applied Physics Letters 97 (21), 211907, 2010
22 2010 Impurity control in high performance multicrystalline silicon G Stokkan, DS Marisa, R Søndenå, M Juel, A Autruffe, K Adamczyk, ...
physica status solidi (a) 214 (7), 1700319, 2017
21 2017 Optical analysis of a ZnO/Cu2O subcell in a silicon-based tandem heterojunction solar cell Ø Nordseth, R Kumar, K Bergum, L Fara, SE Foss, H Haug, F Drăgan, ...
Green and Sustainable Chemistry 7 (1), 57-69, 2017
21 2017 SiOyNx/SiNx stack anti-reflection coating with PID-resistance for crystalline silicon solar cells C Zhou, J Zhu, SE Foss, H Haug, Ø Nordseth, ES Marstein, W Wang
Energy Procedia 77, 434-439, 2015
20 2015 Surface Passivation Properties of Thin Film on n-Type Crystalline Si X Cheng, P Repo, H Halvard, AP Perros, ES Marstein, M Di Sabatino, ...
IEEE Journal of Photovoltaics 7 (2), 479-485, 2017
16 2017 The effect of phosphorus diffusion gettering on recombination at grain boundaries in HPMC-Silicon wafers MS Wiig, K Adamczyk, H Haug, KE Ekstrøm, R Søndenå
Energy Procedia 92, 886-895, 2016
15 2016 Photoluminescence imaging under applied bias for characterization of Si surface passivation layers H Haug, Ø Nordseth, EV Monakhov, ES Marstein
Solar energy materials and solar cells 106, 60-65, 2012
14 2012 Silicon surface passivation by PEDOT: PSS functionalized by SnO2 and TiO2 nanoparticles M García-Tecedor, SZ Karazhanov, GC Vasquez, H Haug, D Maestre, ...
Nanotechnology 29 (3), 035401, 2017
13 2017 Temperature dependent photoluminescence imaging calibrated by photoconductance measurements H Haug, R Søndenå, MS Wiig, ES Marstein
Energy Procedia 124, 47-52, 2017
13 2017 Modulating the field-effect passivation at the SiO2 /c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method H Haug, S Olibet, Ø Nordseth, E Stensrud Marstein
Journal of Applied Physics 114 (17), 174502, 2013
13 2013 Li and OH-Li Complexes in Hydrothermally Grown Single-Crystalline ZnO KM Johansen, H Haug, Ø Prytz, PT Neuvonen, KE Knutsen, L Vines, ...
Journal of electronic materials 40 (4), 429-432, 2011
12 2011 A high-accuracy calibration method for temperature dependent photoluminescence imaging ST Kristensen, S Nie, MS Wiig, H Haug, C Berthod, R Strandberg, ...
AIP Conference Proceedings 2147 (1), 020007, 2019
10 2019 On the recombination centers of iron-gallium pairs in Ga-doped silicon TU Nærland, S Bernardini, H Haug, S Grini, L Vines, N Stoddard, ...
Journal of Applied Physics 122 (8), 085703, 2017
9 2017 Simulating the effect of lifetime non-uniformity on solar cell performance using cmd-PC1D 6 and Griddler 2 H Haug, MS Wiig, R Søndenå, J Wong
Energy Procedia 92, 69-74, 2016
9 2016