| Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting P Zhou, IA Navid, Y Ma, Y Xiao, P Wang, Z Ye, B Zhou, K Sun, Z Mi Nature 613 (7942), 66-70, 2023 | 166 | 2023 |
| High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ... Advanced Materials 28 (36), 7978-7983, 2016 | 74 | 2016 |
| Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy P Wang, D Wang, NM Vu, T Chiang, JT Heron, Z Mi Applied Physics Letters 118 (22), 2021 | 68 | 2021 |
| Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt Y Wang, X Rong, S Ivanov, V Jmerik, Z Chen, H Wang, T Wang, P Wang, ... Advanced Optical Materials 7 (10), 1801763, 2019 | 58 | 2019 |
| Molecular beam epitaxy and characterization of wurtzite ScxAl1− xN P Wang, DA Laleyan, A Pandey, Y Sun, Z Mi Applied Physics Letters 116 (15), 2020 | 49 | 2020 |
| Monolayer GaN excitonic deep ultraviolet light emitting diodes Y Wu, X Liu, P Wang, DA Laleyan, K Sun, Y Sun, C Ahn, M Kira, ... Applied Physics Letters 116 (1), 2020 | 46 | 2020 |
| Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy X Rong, X Wang, G Chen, J Pan, P Wang, H Liu, F Xu, P Tan, B Shen Superlattices and Microstructures 93, 27-31, 2016 | 42 | 2016 |
| Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al (Ga) N Nanowire and Planar Heterostructures A Aiello, Y Wu, A Pandey, P Wang, W Lee, D Bayerl, N Sanders, Z Deng, ... Nano Letters 19 (11), 7852-7858, 2019 | 40 | 2019 |
| Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy D Wang, P Wang, B Wang, Z Mi Applied Physics Letters 119 (11), 2021 | 39 | 2021 |
| Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire D Wang, J Su, Z Chen, T Wang, L Yang, B Sheng, S Lin, X Rong, P Wang, ... Advanced Electronic Materials 5 (2), 1800651, 2019 | 39 | 2019 |
| β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy J Wei, K Kim, F Liu, P Wang, X Zheng, Z Chen, D Wang, A Imran, X Rong, ... Journal of Semiconductors 40 (1), 012802, 2019 | 38 | 2019 |
| Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires P Wang, Y Yuan, C Zhao, X Wang, X Zheng, X Rong, T Wang, B Sheng, ... Nano letters 16 (2), 1328-1334, 2016 | 37 | 2016 |
| N-polar ScAlN and HEMTs grown by molecular beam epitaxy P Wang, D Wang, B Wang, S Mohanty, S Diez, Y Wu, Y Sun, E Ahmadi, ... Applied Physics Letters 119 (8), 2021 | 35 | 2021 |
| Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform Y Sun, W Shin, DA Laleyan, P Wang, A Pandey, X Liu, Y Wu, M Soltani, ... Optics letters 44 (23), 5679-5682, 2019 | 33 | 2019 |
| An epitaxial ferroelectric ScAlN/GaN heterostructure memory D Wang, P Wang, S Mondal, S Mohanty, T Ma, E Ahmadi, Z Mi Advanced Electronic Materials 8 (9), 2200005, 2022 | 30 | 2022 |
| N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs A Pandey, Y Malhotra, P Wang, K Sun, X Liu, Z Mi Photonics Research 10 (4), 1107-1116, 2022 | 30 | 2022 |
| Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes P Wang, A Pandey, J Gim, WJ Shin, ET Reid, DA Laleyan, Y Sun, ... Applied Physics Letters 116 (17), 2020 | 30 | 2020 |
| N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs X Liu, Y Sun, Y Malhotra, A Pandey, P Wang, Y Wu, K Sun, Z Mi Photonics Research 10 (2), 587-593, 2022 | 28 | 2022 |
| Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth X Sun, P Wang, B Sheng, T Wang, Z Chen, K Gao, M Li, J Zhang, W Ge, ... Quantum Engineering 1 (3), e20, 2019 | 28 | 2019 |
| Deep‐ultraviolet micro‐LEDs exhibiting high output power and high modulation bandwidth simultaneously D Li, S Liu, Z Qian, Q Liu, K Zhou, D Liu, S Sheng, B Sheng, F Liu, Z Chen, ... Advanced Materials 34 (19), 2109765, 2022 | 26 | 2022 |
