Ping Wang
Sitert av
Sitert av
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
P Zhou, IA Navid, Y Ma, Y Xiao, P Wang, Z Ye, B Zhou, K Sun, Z Mi
Nature 613 (7942), 66-70, 2023
High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure
X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ...
Advanced Materials 28 (36), 7978-7983, 2016
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
P Wang, D Wang, NM Vu, T Chiang, JT Heron, Z Mi
Applied Physics Letters 118 (22), 2021
Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt
Y Wang, X Rong, S Ivanov, V Jmerik, Z Chen, H Wang, T Wang, P Wang, ...
Advanced Optical Materials 7 (10), 1801763, 2019
Molecular beam epitaxy and characterization of wurtzite ScxAl1− xN
P Wang, DA Laleyan, A Pandey, Y Sun, Z Mi
Applied Physics Letters 116 (15), 2020
Monolayer GaN excitonic deep ultraviolet light emitting diodes
Y Wu, X Liu, P Wang, DA Laleyan, K Sun, Y Sun, C Ahn, M Kira, ...
Applied Physics Letters 116 (1), 2020
Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy
X Rong, X Wang, G Chen, J Pan, P Wang, H Liu, F Xu, P Tan, B Shen
Superlattices and Microstructures 93, 27-31, 2016
Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al (Ga) N Nanowire and Planar Heterostructures
A Aiello, Y Wu, A Pandey, P Wang, W Lee, D Bayerl, N Sanders, Z Deng, ...
Nano Letters 19 (11), 7852-7858, 2019
Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy
D Wang, P Wang, B Wang, Z Mi
Applied Physics Letters 119 (11), 2021
Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire
D Wang, J Su, Z Chen, T Wang, L Yang, B Sheng, S Lin, X Rong, P Wang, ...
Advanced Electronic Materials 5 (2), 1800651, 2019
β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy
J Wei, K Kim, F Liu, P Wang, X Zheng, Z Chen, D Wang, A Imran, X Rong, ...
Journal of Semiconductors 40 (1), 012802, 2019
Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires
P Wang, Y Yuan, C Zhao, X Wang, X Zheng, X Rong, T Wang, B Sheng, ...
Nano letters 16 (2), 1328-1334, 2016
N-polar ScAlN and HEMTs grown by molecular beam epitaxy
P Wang, D Wang, B Wang, S Mohanty, S Diez, Y Wu, Y Sun, E Ahmadi, ...
Applied Physics Letters 119 (8), 2021
Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform
Y Sun, W Shin, DA Laleyan, P Wang, A Pandey, X Liu, Y Wu, M Soltani, ...
Optics letters 44 (23), 5679-5682, 2019
An epitaxial ferroelectric ScAlN/GaN heterostructure memory
D Wang, P Wang, S Mondal, S Mohanty, T Ma, E Ahmadi, Z Mi
Advanced Electronic Materials 8 (9), 2200005, 2022
N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs
A Pandey, Y Malhotra, P Wang, K Sun, X Liu, Z Mi
Photonics Research 10 (4), 1107-1116, 2022
Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes
P Wang, A Pandey, J Gim, WJ Shin, ET Reid, DA Laleyan, Y Sun, ...
Applied Physics Letters 116 (17), 2020
N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs
X Liu, Y Sun, Y Malhotra, A Pandey, P Wang, Y Wu, K Sun, Z Mi
Photonics Research 10 (2), 587-593, 2022
Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth
X Sun, P Wang, B Sheng, T Wang, Z Chen, K Gao, M Li, J Zhang, W Ge, ...
Quantum Engineering 1 (3), e20, 2019
Deep‐ultraviolet micro‐LEDs exhibiting high output power and high modulation bandwidth simultaneously
D Li, S Liu, Z Qian, Q Liu, K Zhou, D Liu, S Sheng, B Sheng, F Liu, Z Chen, ...
Advanced Materials 34 (19), 2109765, 2022
Systemet kan ikke utføre handlingen. Prøv på nytt senere.
Artikler 1–20