Dimosthenis Peftitsis

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Jacek RabkowskiKTH Royal Institute of Technology/Warsaw University of TechnologyVerified email at ee.pw.edu.pl
Hans-Peter NeeProfessor power electronicsVerified email at kth.se
Georg TolstoykthVerified email at kth.se
M BakowskiVerified email at acreo.se
Juan ColmenaresPhD - KTH Royal Institute of TechnologyVerified email at kth.se
Jang-Kwon LimResearch Scientist at RISE AcreoVerified email at acreo.se
Diane-Perle SadikPost Doctoral Fellow, Royal Institute of TechnologyVerified email at kth.se
Antonios AntonopoulosScientist, ABB Corporate Research CenterVerified email at se.abb.com
Andreas GiannakisPhD student at NTNU, Norwegian University of Science and TechnologyVerified email at ntnu.no
Ole Christian SproNorwegian University of Science and TechnologyVerified email at sintef.no
Mariusz ZdanowskiWarsaw University of TechnologyVerified email at ee.pw.edu.pl
Anastasios BalouktsisProfessor, Electrical and Mechanical Engineering , Mathematician, International Hellenic UniversityVerified email at ihu.gr
J. BielaLaboratory for High Power Electronic Systems (HPE), ETH ZurichVerified email at ethz.ch
Salvatore D'ArcoSINTEF Energy ResearchVerified email at sintef.no
Andrei BlinovPh.D.Verified email at ieee.org
Szymon PiaseckiWarsaw University of TechnologyVerified email at ee.pw.edu.pl
Fredrik T. B. W. GöthnerNorwegian University of Science and TechnologyVerified email at ntnu.no
Dmitri VinnikovResearch Professor, Power Electronics Group, Tallinn University of TechnologyVerified email at taltech.ee
Panagiotis BakasHitachi-ABB Power Grids ResearchVerified email at hitachi-powergrids.com
Juan Manuel Rivas DavilaAssociate Professor in Electrical Engineering, Stanford UniversityVerified email at stanford.edu

Dimosthenis Peftitsis

Associate Professor of Power Electronics at NTNU, Norwegian University of Science and Technology

Verified email at ntnu.no - Homepage

Power Electronics Silicon Carbide DC breakers MV converters Reliability of power semiconductors


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Silicon carbide power transistors: A new era in power electronics is initiated J Rabkowski, D Peftitsis, HP Nee IEEE Industrial Electronics Magazine 6 (2), 17-26, 2012	358	2012
High-power modular multilevel converters with SiC JFETs D Peftitsis, G Tolstoy, A Antonopoulos, J Rabkowski, JK Lim, M Bakowski, ... IEEE Transactions on Power Electronics 27 (1), 28-36, 2011	211	2011
Short-circuit protection circuits for silicon-carbide power transistors DP Sadik, J Colmenares, G Tolstoy, D Peftitsis, M Bakowski, J Rabkowski, ... IEEE Transactions on Industrial Electronics 63 (4), 1995-2004, 2015	127	2015
Challenges regarding parallel connection of SiC JFETs D Peftitsis, R Baburske, J Rabkowski, J Lutz, G Tolstoy, HP Nee IEEE Transactions on Power Electronics 28 (3), 1449-1463, 2012	122	2012
Low-loss high-performance base-drive unit for SiC BJTs J Rabkowski, G Tolstoy, D Peftitsis, HP Nee IEEE Transactions on Power Electronics 27 (5), 2633-2643, 2011	101	2011
Gate and base drivers for silicon carbide power transistors: An overview D Peftitsis, J Rabkowski IEEE Transactions on Power Electronics 31 (10), 7194-7213, 2015	92	2015
Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs DP Sadik, J Colmenares, D Peftitsis, JK Lim, J Rabkowski, HP Nee 2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013	83	2013
Parallel-operation of discrete SiC BJTs in a 6-kW/250-kHz DC/DC boost converter J Rabkowski, D Peftitsis, HP Nee IEEE transactions on power electronics 29 (5), 2482-2491, 2013	62	2013
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules J Colmenares, D Peftitsis, J Rabkowski, DP Sadik, G Tolstoy, HP Nee IEEE Transactions on Industry Applications 51 (6), 4664-4676, 2015	59	2015
An experimental evaluation of SiC switches in soft-switching converters P Ranstad, HP Nee, J Linner, D Peftitsis IEEE Transactions on Power Electronics 29 (5), 2527-2538, 2013	57	2013
Design steps toward a 40-kVA SiC JFET inverter with natural-convection cooling and an efficiency exceeding 99.5% J Rabkowski, D Peftitsis, HP Nee IEEE Transactions on Industry Applications 49 (4), 1589-1598, 2013	52	2013
Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5% J Rabkowski, D Peftitsis, HP Nee 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012	50	2012
Self-powered gate driver for normally on silicon carbide junction field-effect transistors without external power supply D Peftitsis, J Rabkowski, HP Nee IEEE transactions on power electronics 28 (3), 1488-1501, 2012	48	2012
Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC JFETs JK Lim, D Peftitsis, J Rabkowski, M Bakowski, HP Nee IEEE transactions on power electronics 29 (5), 2180-2191, 2013	43	2013
On the design process of a 6-kVA quasi-Z-inverter employing SiC power devices M Zdanowski, D Peftitsis, S Piasecki, J Rabkowski IEEE Transactions on Power Electronics 31 (11), 7499-7508, 2016	40	2016
A discretized proportional base driver for silicon carbide bipolar junction transistors G Tolstoy, D Peftitsis, J Rabkowski, PR Palmer, HP Nee IEEE Transactions on Power Electronics 29 (5), 2408-2417, 2013	36	2013
Mvdc distribution grids and potential applications: Future trends and protection challenges A Giannakis, D Peftitsis 2018 20th european conference on power electronics and applications (EPE'18 …, 2018	33	2018
A new MPPT method for Photovoltaic generation systems based on Hill Climbing algorithm D Peftitsis, G Adamidis, A Balouktsis 2008 18th International Conference on Electrical Machines, 1-5, 2008	32	2008
Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors D Peftitsis, J Rabkowski, G Tolstoy, HP Nee Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011	31	2011
A simple high-performance low-loss current-source driver for SiC bipolar transistors J Rabkowski, D Peftitsis, HP Nee, M Zdanowski Proceedings of The 7th International Power Electronics and Motion Control …, 2012	30	2012

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