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Simone Gerardin
Simone Gerardin
Dipartimento di Ingegneria dell'Informazione - Università di Padova
Dirección de correo verificada de dei.unipd.it
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Radiation-induced short channel (RISCE) and narrow channel (RINCE) effects in 65 and 130 nm MOSFETs
F Faccio, S Michelis, D Cornale, A Paccagnella, S Gerardin
IEEE Transactions on Nuclear Science 62 (6), 2933-2940, 2015
2112015
Present and future non-volatile memories for space
S Gerardin, A Paccagnella
IEEE Transactions on nuclear science 57 (6), 3016-3039, 2010
2072010
Radiation effects in flash memories
S Gerardin, M Bagatin, A Paccagnella, K Grürmann, F Gliem, TR Oldham, ...
IEEE Transactions on Nuclear Science 60 (3), 1953-1969, 2013
1642013
Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments
L Gonella, F Faccio, M Silvestri, S Gerardin, D Pantano, V Re, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007
1462007
Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses
F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ...
IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017
1082017
A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility
M Violante, L Sterpone, A Manuzzato, S Gerardin, P Rech, M Bagatin, ...
IEEE Transactions on Nuclear Science 54 (4), 1184-1189, 2007
1052007
Ionizing Radiation Effectsin Electronics
M Bagatin, S Gerardin
Taylor & Francis, 2016
902016
Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source
C Andreani, A Pietropaolo, A Salsano, G Gorini, M Tardocchi, ...
Applied physics letters 92 (11), 2008
802008
TID sensitivity of NAND flash memory building blocks
M Bagatin, G Cellere, S Gerardin, A Paccagnella, A Visconti, S Beltrami
IEEE Transactions on Nuclear Science 56 (4), 1909-1913, 2009
762009
Key contributions to the cross section of NAND flash memories irradiated with heavy ions
M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, S Beltrami, ...
IEEE Transactions on Nuclear Science 55 (6), 3302-3308, 2008
612008
Impact of NBTI aging on the single-event upset of SRAM cells
M Bagatin, S Gerardin, A Paccagnella, F Faccio
IEEE Transactions on Nuclear Science 57 (6), 3245-3250, 2010
512010
Catastrophic failure in highly scaled commercial NAND flash memories
F Irom, DN Nguyen, M Bagatin, G Cellere, S Gerardin, A Paccagnella
IEEE Transactions on Nuclear Science 57 (1), 266-271, 2010
512010
Error instability in floating gate flash memories exposed to TID
M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, M Bonanomi, ...
IEEE Transactions on Nuclear Science 56 (6), 3267-3273, 2009
512009
Drain current decrease in MOSFETs after heavy ion irradiation
A Cester, S Gerardin, A Paccagnella, JR Schwank, G Vizkelethy, ...
IEEE transactions on nuclear science 51 (6), 3150-3157, 2004
502004
Dose-rate sensitivity of 65-nm MOSFETs exposed to ultrahigh doses
G Borghello, F Faccio, E Lerario, S Michelis, S Kulis, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 65 (8), 1482-1487, 2018
462018
Total ionizing dose effects in 3-D NAND flash memories
M Bagatin, S Gerardin, A Paccagnella, S Beltrami, A Costantino, ...
IEEE Transactions on Nuclear Science 66 (1), 48-53, 2018
442018
Influence of halo implantations on the total ionizing dose response of 28-nm pMOSFETs irradiated to ultrahigh doses
S Bonaldo, S Mattiazzo, C Enz, A Baschirotto, A Paccagnella, X Jin, ...
IEEE Transactions on Nuclear Science 66 (1), 82-90, 2018
432018
Ionizing-radiation response and low-frequency noise of 28-nm MOSFETs at ultrahigh doses
S Bonaldo, S Mattiazzo, C Enz, A Baschirotto, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 67 (7), 1302-1311, 2020
422020
Effects of heavy-ion irradiation on vertical 3-D NAND flash memories
M Bagatin, S Gerardin, A Paccagnella, S Beltrami, E Camerlenghi, ...
IEEE Transactions on Nuclear Science 65 (1), 318-325, 2017
422017
Impact of technology scaling on the heavy-ion upset cross section of multi-level floating gate cells
M Bagatin, S Gerardin, A Paccagnella, A Visconti
IEEE Transactions on Nuclear Science 58 (3), 969-974, 2011
422011
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